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VAPOR PHASE TREATMENT OF DELECTRIC MATERALS

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VAPOR PHASE TREATMENT OF DELECTRIC MATERALS ( vapor-phase-treatment-delectric-materals )

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US 7,678,712B2 herein,aregeneralythoughttocompriseanydielectriccom Thefollowingnon-limitingexamplesservetoilustratethe 19 ponentorlayereddielectriccomponentthatcanbeutilizedin anelectronic-basedproduct.Contemplatedelectroniccom ponentscomprisecircuitboards,chippackaging,dielectric componentsofcircuitboards,printed-wiringboards,and othercomponentsofcircuitboards,suchascapacitors,induc tors,andresistors. Electronic-basedproductscanbe“finished inthesense thattheyarereadytobeusedinindustryorbyotherconsum ers.Examplesoffinishedconsumerproductsareatelevision,10 acomputer,acelphone,apager,apalm-typeorganizer,a portableradio,acarstereo,andaremotecontrol.Alsocon templatedare“intermediate'productssuchascircuitboards, chippackaging,andkeyboardsthatarepotentialyutilizedin finishedproducts. invention. 20 EXAMPLE 1. SystemConfigurationA Electronicproductsmayalsocompriseaprototypecom ponent,atanystageofdevelopmentfromconceptualmodel tofinalscale-upmock-up.Aprototypemayormaynotcon tainaloftheactualcomponentsintendedinafinishedprod uct,andaprototypemayhavesomecomponentsthatare constructedoutofcompositematerialinordertonegatetheir initialefectson othercomponents while being initialy tested.Electronicproductsandcomponentsmaycomprise layeredmaterials,layeredcomponents,andcomponentsthat arelaminatedinpreparationforuseinthecomponentor product. 15 TheconfigurationshowninFIG.1wasusedtoperforma silylationtreatment.Areservoirwasfiledwith100%dim ethyldiacetoxysilane(DMDAS).Reservoirtemperatureis adjustable.A waferwithplasmadamagedporouslow-k (NANOGLASS-E,commerciallyavailableformHoneywell International,Sunnyvale,Calif.)wasplacedinthereaction chamber,evacuatedfora30mindehydrationstepandduring evacuationthefilmwasheatedtoadesiredtemperature.The filmwasexposedtoDMDAS vaporfordesiredtime.The waferwasthenremovedfromthereactionchamberandbaked inN2ambientonhotplatesat125°C.,200°C.and350°C.for 1minuteeach.Thepropertiesofthelow-kfilmatdiferent processstepsareasfolows.Anincreaseinchamberprocess temperatureincreased96carbonrepairanddecreaseddielec tricconstant.Anincreaseinexposuretimedecreasedcarbon repairforlowertemperature,butincreasedcarbonrepairfor highertemperatureproces. Chamber ProcessFlow Temp(C.) PostCure DamagedNGE DMDAS Only 45 DMDAS Only 45 DMDAS Only 150 DMDAS Only 150 PumpdownPrior DMDAS DMDAS ContactAngle % Carbon Exposure (NGE)Post RestorationPost k(Hg)Post Exposure(min) Time(min) 30 1 30 10 30 1 30 10 350 HP 350 HP 25 10 43 65 350 HP 2.22 2.85 2.57 2.58 2.53 2.54 40 45 50 55 EXAMPLE 2 SystemConfigurationA TheconfigurationshowninFIG.1wasusedtoperforma silylationtreatment.A reservoirwasfiledwith100% DMDAS.Thereservoirtemperatureisadjustable.Awafer withplasmadamagedporouslow-k(NANOGLASS-E)was placedinthereactionchamber,evacuatedfora30mindehy drationstepandduringevacuationthefilmwasheatedtoa desiredtemperature.ThefilmwasexposedtoDMDASvapor for1min.ExposetoNH for1minute.Thewaferwasthen removedfromthereactionchamberandbakedinN2 ambient onhotplatesat125°C.,200°C.and350°C.for1mineach. Thepropertiesofthelow-kfilmatdiferentprocessstepsare asfolows.An increaseinchamberprocesstempwith1 minuteexposuredecreased'%carbonrepair,butdecreased dielectricconstant.Theconditionwithincreasedexposure timeandhigherchambertempgavedecreased'%carbon repairanddecreaseddielectricconstant. PumpdownPrior DMDAS ContactAngle %Carbon DMDASExposure Exposure (NGE)Post Restoration k(Hg)Post Chamber ProcessFlow Temp(C.) (min) Time(min) 350HP Post350HP 350HP PostCure >80 2.22 DamagedNGE <10 2.85

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