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ProcessFlow DMDAS - NH3 DMDAS - NH3 DMDAS - NH3 Temp(C.) Anneal(C.) (min) Time(min) 2OO 275 350 350 30 30 350 30 30 350 30 30 350HP 350HP 350HP 121 82 2.47 123 245 115 16S 2.33 minutes.Thefilmwasthenremovedfromthereactioncham berandbakedinNambientonhotplatesat125°C.,200°C. EXAMPLE 5 SystemConfigurationC US 7,678,712B2 -continued PumpdownPrior DMDAS ContactAngle % Carbon Chamber Final DMDAS Exposure Exposure (NGE)Post RestorationPost k(Hg)Post and350°C.for1minuteeach.Thepropertiesofthelow-k 15 filmatdiferentprocessstepsareasfolows.Anincreasein TheconfigurationshowninFIG.3wasusedtoperforma dehydrationstepforthe110°C.conditiongaveanincreasein silylationtreatment.Ajacketedreservoirwasfiledwith contactangle.i b irandad 100%DMDASandmaintainedat55°C.Awaferwithplasma angle,increaseincarbonrepairan CaS 1 damagedporouslow-k(NANOGLASS-E)wasplacedinthe dielectricconstant.Dehydrationstepofthe300°C.chamber reactionchamber,evacuatedforadehydrationstepand processtemperaturehadlitleefectoncontactangle,9% heatedtoadesiredchambertemperature.Theplasmadam-20carbonrepairanddielectricconstant.Overalhigherchamber agedporouslow-kfilmwasexposedtoDMDASvaporfor5 temperatureprocessinggavebeterresults. ContactAngle % Carbon Chamber PumpdownPrior (NGE)Post RestorationPostk(Hg)Post ProcessFlow Temp(C.) DMDAS Exposure 350HP 350HP 350HP PostCure >80 2.22 DamagedNGE <10 3.00 DMDAS Only DMDAS Only DMDAS Only DMDAS Only 110 10 97 14 2.56 110 900 103 24 2.53 300 10 84 30 2.45 3OO 900 87 31 2.47 35 EXAMPLE 6 SystemConfigurationC TheconfigurationshowninFIG.3wasusedtoperforma silylationtreatment.A jacketedreservoirwas filedwith 100%DMDASandmaintainedat55°C.Awaferwithplasma damagedporouslow-k(NANOGLASS-E)wasplacedinthe reaction chamber, evacuated for a dehydration step and heatedtoadesiredchambertemperature.Theplasmadam agedporouslow-kfilmwasexposedtoNH gasfor5min. After5minutesNH gasexposurewhileNH isflowing chamberisopeneduptoDMDAS gas.Thefilmwasthen removedfromthereactionchamberandbakedinN2 ambient onhotplatesat125°C.,200°C.and350°C.for1minute 50 each.Thepropertiesofthelow-kfilmatdiferentprocess stepsareasfolows.Thedehydrationsteppriortointroduc tionofNH hadlitleefectonfinalresultswithinagiven temperaturerange.Thiscouldbetheresultofinthepresence ofNH and/orincreaseddehydrationstepduringtheNH s step.Increasedchambertemperaturegavedecreasedcontact angle,increasedcarbonrepairanddecreaseddielectriccon Stant. ContactAngle %Carbon Chamber PumpdownPriorto (NGE)Post Restoration k(Hg)Post ProcessFlow Temp(C.) ExposuretoNH3 350HP Post350HP 350HP PostCure DamagedNGE NH3 - DMDAS 110 10 >80 2.22 <10 3.00 114 32 2.45PDF Image | VAPOR PHASE TREATMENT OF DELECTRIC MATERALS
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