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-continued ContactAngle %Carbon Chamber PumpdownPriorto (NGE)Post Restoration k(Hg)Post ProcessFlow Temp(C.) ExposuretoNH3 350HP Post350HP 350HP NH3 - DMDAS 110 900 114 25 NH3-DMDAS 3OO 10 86 39 NH3-DMDAS 3OO 900 85 45 EXAMPLE7 SystemConfigurationC TheconfigurationshowninFIG3wasusedtoperforma silylation treatment. A jacketed reservoir was filed with O 2.46 240 240 toDMDAS gasfor5minutes.Thewaferwasthenremoved fromthereactionchamberandbakedinN.ambientonhot platesat125°C.,200°C.and350°C.for1minuteeach.The 15 propertiesofthelow-kfilmatdiferentprocessstepsareas folows.ThedehydrationsteppriortointroductionofNH had li -0 adlitleefectonfinalresultswithinagiventemperature range.ThiscouldbetheresultofinthepresenceofNH 100%DMDASandmaintainedat55°C.Awaferwithplasma damagedporouslow-k(NANOGLASS-E)wasplacedinthe ProcessFlow PostCure DamagedNGE NH3 +pumpdown+DMDAS NH3 + pumpdown + DMDAS NH3 + pumpdown + DMDAS NH3 + pumpdown + DMDAS % Carbon ChamberPumpdownPriorto ContactAngle Restorationk(Hg)Post Temp(C.) ExposuretoNH3 (NGE)Post350HP Post350HP 350HP US 7,678,712B2 reactionchamberandheatedtoadesiredchambertempera- ture.Adesiredpumpdown(degas)steppriortogasexposure. Increasedchambertemperaturegavedecreasedcontact ThefilmwasexposedtoNHgasfor5minutesThechamber angle,increasedcarbonrepairanddecreaseddielectriccon wasevacuatedfor10secandthanthechamberisopenedup Stant. and/orincreaseddehydrationstepduringtheNH Step. >80 2.22 <10 3.00 102 17 2.53 104 22 2.53 85 25 2.48 86 45 2.48 EXAMPLE 8 SystemConfigurationA TheconfigurationshowninFIG.1wasusedtoperforma silylationtreatment.A reservoirwasfiledwith100%Hex amethylcyclotrisilazane(HMCTZ).Reservoirtemperatureis adjustable.Thisstudymaintainedreservoirtempof45°C.A waferwithplasmadamagedporouslow-k(NANOGLASS E)wasplacedinthereactionchamber,evacuatedfor30min andduringevacuationthefilmwasheatedtoadesiredtem perature chamber temperature. The film was exposed to HMCTZvaporfor1.Thewaferwasthenremovedfromthe reactionchamberandbakedinN2ambientonhotplatesat 125°C.,200°C.and350°C.for1minuteeach.Theproper tiesofthelow-kfilmatdiferentprocessstepsareasfolows. UsingHMCTZforrepairofloweredthedielectricconstant from2.92to2.45. 110 10 110 900 3OO 10 3OO 900 40 % Carbon Chamber PumpdownPriorto ContactAngle Restoration k(Hg)Post ProcessFlow Temp(C.) ExposuretoHMCTZ (NGE)Post350HP Post350HP 350HP PostCure >80 2.22 DamagedNGE <10 2.92 HMCTZ 150 30 2.46 HMCTZ 150 30 2.45PDF Image | VAPOR PHASE TREATMENT OF DELECTRIC MATERALS
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