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29 (i)sealSurfaceporesofthesilicateororganosilicate dielectricfilm,whenthefilmisporous;or (i)wherethefilmisporous,firstaddcarboncontaining moietiestothesilicateororganosilicatedielectricfilm, andthenSubsequentlysealSurfaceporesofthesilicate ororganosilicatedielectricfilm. 30 fluidexposureandcombinationsthereof,whichatleastone treatmentremovesatleastaportionofpreviouslyexisting carboncontainingmoietiesfromthesilicateororganosilicate dielectricfilm. 13.Themethodofclaim1whereinthesilicateororgano silicatedielectricfilmhasbeenpreviouslytreatedtoremove fromabout5toabout95%ofpreviouslyexistingcarbon containingmoieties;andstep(c)isconductedtoaddcarbon containingmoietiestothesilicateororganosilicatedielectric film. US 7,678,712B2 2.Amethodofpreventingvoidsinadamagedsilicateor organosilicatedielectricfilmonaSubstrate,whichsilicateor organosilicatedielectricfilmeithercomprisessilanolmoi etiesorwhichsilicateororganosilicatedielectricfilmhashad10 atleastsomepreviouslypresentcarboncontainingmoieties 14.Themethodofclaim1whereinthesilicateororgano removedtherefrom,themethodcomprising: (a)optionalydehydratingatleastaportionofasilicateor organosilicatedielectricfilmonasubstrate;then (b)applyinganactivatingagentforasurfacemodification15 silicatedielectricfilmcomprisesinterconnectedporesand whereinstep(c)(i)orstep(c)(i)isconductedundercondi tionssuficienttoaddcarboncontainingmoietiestothesili cateororganosilicatedielectricfilmthroughadepththereof suchthatatleast10%ofthesilanolmoietiesorbondscreated byremovalofcarboncontainingmoietiesfromthesilicateor organosilicatedielectricfilmaresilylated. agentcompositiontothesilicateororganosilicate dielectricfilmbychemicalvapordeposition,whichacti Vatingagentisselectedfromthegroupconsistingofan amine,anoniumcompound,analkalimetalhydroxide, 15.Themethodofclaim1whereinthesilicateororgano anacid,andcombinationsthereof;then (c)contactingthesilicateororganosilicatedielectricfilm withaSurfacemodificationagentcompositionby chemicalvapordepositionoftheSurfacemodification 16.Themethodofclaim1whereinthesilicateororgano agentcompositiontothesilicateororganosilicate dielectricfilm,whereintheSurfacemodificationagent25 compositioncomprisesacomponentcapableofalkylat ingorarylatingsilanolmoietiesorbondscreatedby removalofcarboncontainingmoietiesfromthesilicate ororganosilicatedielectricfilmviasilylation;saidcon tactingbeingconductedunderconditionssuficientto30 eithersealSurfaceporesofthesilicateororganosilicate 17.Themethodofclaim1furthercomprisingthesubse dielectricfilm,whenthefilmisporous;or wherethefilmisporous,firstaddcarboncontainingmoi etiestothesilicateororganosilicatedielectricfilm,and thenSubsequentlysealSurfaceporesofthesilicateor35 quentstep(d),afterstep(c)ofsubjectingthesilicateor organosilicatedielectricfilmtoatreatmentsuficienttoefect (i)anincreasedaditionofcarboncontainingmoietiestothe silicateororganosilicatedielectricfilmor(i)anincreased sealingofSurfaceporesofthesilicateororganosilicate dielectricfilm;or(i)firstanincreasedaditionofcarbon containingmoietiestothesilicateororganosilicatedielectric filmandthenanincreasedsealingofSurfaceporesofthe silicateororganosilicatedielectricfilmor(iv)removingat leastsomeresidualactivatingagent,Surfacemodification agent,by-products;andcombinationsthereof. organosilicatedielectricfilm. 3.Themethodofclaim1whereinstep(a)isconducted. 4.Themethodofclaim1whereinstep(b)isconducted. 5.Themethodofclaim1whereinstep(b)isconductedby chemicalvapordeposition. 6.Themethodofclaim1whereinbothstep(a)andstep(b) areconducted. 40 7.Themethodofclaim1whereinstep(c)isconductedby 18.Themethodofclaim17whereinstep(d)isconducted chemicalvapordeposition. 8.Themethodofclaim1whereinstep(c)isconducted45 underconditionssuficienttoaddcarboncontainingmoieties tothesilicateororganosilicatedielectricfilm. 9.Themethodofclaim1whereinstep(c)isconducted underconditionsSuficienttosealSurfaceporesofthesilicate ororganosilicatedielectricfilmwhenSuchfilmisporous. 50 10.Themethodofclaim1whereinstep(c)isconducted underconditionssuficienttofirstaddcarboncontainingmoi etiestothesilicateororganosilicatedielectricfilm,andthen sealSurfaceporesofthesilicateororganosilicatedielectric filmwhensuchfilmisporous. 1.Themethodofclaim1whereinthefilmisanorgano silicatedielectricfilmwhichhasbeenhasbeenpreviously Subjectedtoatleastonetreatmentwhichremovesatleasta portionofpreviouslyexistingcarboncontainingmoieties fromtheorganosilicatedielectricfilm. by heating, ultraviolet radiation, plasma energy, electron beam,ionbeamorcombinationsthereof. 19.Themethodofclaim1whereinstep(c)isconductedat atemperatureoffromabout0°C.toabout450°C.forfrom about1secondtoabout2hours. 20. The method of claim 2 wherein the surface modifica tionagentcompositionfurthercomprisesatleastonecom poundhavingaformulaselectedfromthegroupconsistingof acetoxytrimethylsilane,acetoxysilane,diacetoxysilane,tri acetoxysilane,diacetoxydimethylsilarie,dimethyldiacetox ysilane, methyltriacetoxysilane, phenyltriacetoxysilane, diphenyldiacetoxysilane,methyltriethoxysilane,dimethyldi ethoxysilane, trimethylethoxysilane, methyltrimethoxysi lane, dimethyldimethoxysilane, trimethylmethoxysilane, methyltrichlorosilane, dimethyldichlorosilane, trimethyi chiorosilane,methylsilane,dimethylsilane,trimethylsilane, hexamethyldisilaZane, 2-trimethylsiloxypent-2-ene-4-one, n-(trimethylsilyl)acetamide,2-(trimethylsilyl)aceticacid, n-(trimethylsilyl)imidazole,trimethylsilyipropiolate,trim ethylsilyl(trimethylsiloxy)-acetate, nonamethyltrisilaZane, hexamethyldisiloxane, trimethylsilanol, triethylsilanol, triphenylsilanol,t-butyldimethylsilanol,diphenylsilanediol, trimethoxysilane,triethoxysilane,trichlorosilane,hexameth ylcyclotrisilazane,bisdimethylaminodimethylsilane,bisdi 12.Themethodofclaim1whereinthesilicateororgano silicatedielectricfilmhasbeenpreviouslysubjectedtoat leastonetreatmentselectedfromthegroupconsistingof chemicalexposure,plasmaexposure,thermaltreatment, vacuumtreatment,ionizingradiationexposure,electron65 beamexposure,UVexposure,etching,ashing,wetcleaning, plasmaenhancedchemicalvapordeposition,Supercritical 55 60 silicatedielectricfilmhasporesandstep(c)isconducted underconditionsSuficienttosealporesatasurfaceofthe organosilicatedielectricfilmtoadepthofabout50Aorles. silicatedielectricfilmhasporesandstep(c)isconducted underconditionsSuficienttosealporesatasurfaceofthe silicateororganosilicatedielectricfilm,toanextentthata Subsequentexposureto(i)precursorsforchemicalvapor depositionofnitride,carbide,metals,or(i)non-etchingwet cleaningmaterialsdoesnotallowapenetrationthereoftoa depthgreaterthan5timesthemaximumporesize.PDF Image | VAPOR PHASE TREATMENT OF DELECTRIC MATERALS
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