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31 ethylaminodimethylsilane, tris(dimethylamino)methylsi lane,tris(dimethylamino)phenylsilane,tris(dimethylamino) silane,dimethylsilyldiformamide,dimethylsilyldiacetamide, dimethylsilyldisocyante,trimethylsilylisocyanate,methylsi lyltrisocyanateandcombinationsthereof. 21. The method of claim 1 wherein the surface modifica tionagentcompositionfurthercomprisesacorrosioninhibi tOr. 32 30.Themethodofclaim2whereinthesilicateororgano silicatedielectricfilmhasbeenpreviouslysubjectedtoat leastonetreatmentselectedfromthegroupconsistingof chemicalexposure,plasmaexposure,thermaltreatment, vacuum treatment, ionizing radiation exposure, electron beamexposure,UVexposure,etching,ashing,wetcleaning, plasmaenhancedchemicalvapordeposition,Supercritical fluidexposureandcombinationsthereof,whichatleastone treatmentremovesatleastaportionofpreviouslyexisting carboncontainingmoietiesfromthesilicateororganosilicate dielectricfilm. 31.Themethodofclaim2whereinthesilicateororgano silicatedielectricfilmhasbeenpreviouslytreatedtoremove fromabout5toabout95%ofpreviouslyexistingcarbon containingmoieties;andstep(c)isconductedtoaddcarbon containingmoietiestothesilicateororganosilicatedielectric film. 22. The method of claim 2 wherein the surface modifica tionagentcompositioncontainssaidactivatingagent,10 whereintheSurfacemodificationagentcompositioncom prisesacombinationoftheactivatingagentandacomponent capableofalkylatingorarylatingsilanolmoietiesorbonds createdbyremovalofcarboncontainingmoietiesfromthe silicateororganosilicatedielectricfilmviasilylation. 23.Themethodofclaim2whereinsaidcontactingthe silicateororganosilicatedielectricfilmwithasurfacemodi ficationagentcompositionimpartshydrophobicpropertiesto thesilicateororganosilicatedielectricfilm. US 7,678,712B2 15 24.Themethodofclaim2whereinsaidcontactingthe silicateororganosilicatedielectricfilmwithasurfacemodi ficationagentcompositionisconductedunderconditions 3.Themethodofclaim2whereinthesilicateororgano SuficienteithersealSurfaceporesofthesilicateororgano silicatedielectricfilm,whenthefilmisporous;orwherethe filmisporous,firstaddcarboncontainingmoietiestothe25 silicateororganosilicatedielectricfilm,andthenSubse quentlysealSurfaceporesofthesilicateororganosilicate dielectricfilmthroughatleastaportionofadepththereof suchthatatleast10% ofthesilanolmoietiesorbondscreated byremovalofcarboncontainingmoietiesfromthesilicateor30 organosilicatedielectricfilmaresilylated,andthenSubse quentlysealsurfaceporesofthesilicateororganosilicate dielectricfilmtoadepthofabout50Aorles. 25.Themethodofclaim2whereinstep(a)isconducted. 26.Themethodofclaim2whereinstep(c)isconducted35 underconditionssuficienttoaddcarboncontainingmoieties tothesilicateororganosilicatedielectricfilm. 27.Themethodofclaim2whereinstep(c)isconducted underconditionsSuficienttosealSurfaceporesofthesilicate ororganoslilicatedielectricfilmwhensuchfilmisporous. 40 28.Themethodofclaim2whereinstep(c)isconducted underconditionssuficienttofirstaddcarboncontainingmoi etiestothesilicateororganosilicatedielectricfilm,andthen sealSurfaceporesofthesilicateororganosilicatedielectric filmwhensuchfilmisporous. 29.Themethodofclaim2whereinthefilmisanorgano silicatedielectricfilmwhichhasbeenhasbeenpreviously Subjectedtoatleastonetreatmentwhichremovesatleasta portionofpreviouslyexistingcarboncontainingmoieties fromtheorganosilicatedielectricfilm. 34.Themethodofclaim2furthercomprisingthesubse quentstep(d),afterstep(c)ofsubjectingthesilicateor organosilicatedielectricfilmtoatreatmentsuficienttoefect (i)anincreasedaditionofcarboncontainingmoietiestothe silicateororganosilicatedielectricfilmor(i)anincreased sealingofSurfaceporesofthesilicateororganosilicate dielectricfilm;or(i)firstanincreasedaditionofcarbon containingmoietiestothesilicateororganosilicatedielectric filmandthenanincreasedsealingofSurfaceporesofthe silicateororganosilicatedielectricfilmor(iv)removingat leastsomeresidualactivatingagent,Surfacemodification agent,by-products;andcombinationsthereof. 35. The method of claim 2 wherein the surface modifica tionagentcompositionfurthercomprisesacorrosioninhibi tOr. 36.Themethodofclaim2whereinstep(c)isconductedat atemperatureoffromabout0°C.toabout450°C.forfrom about1secondtoabout2hours. 45 32.Themethodofclaim2whereinthesilicateororgano silicatedielectricfilmhasporesandstep(c)isconducted underconditionsSuficienttosealporesatasurfaceofthe organosilicatedielectricfilmtoadepthofabout50Aorles. silicatedielectricfilmhasporesandstep(c)isconducted underconditionsSuficienttosealporesatasurfaceofthe silicateororganosilicatedielectricfilm,toanextentthata Subsequentexposureto(i)precursorsforchemicalvapor depositionofnitride,carbide,metals,or(i)non-etchingwet cleaningmaterialsdoesnotallowapenetrationthereoftoa depthgreaterthan5timesthemaximumporesize.PDF Image | VAPOR PHASE TREATMENT OF DELECTRIC MATERALS
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