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• Complete International Module Intercomparison study and publish results. A summary of progress on these milestones is outlined in section 3.2. 2.3 Electro-Optical Characterization Task • Organize the 15th Workshop on Crystalline Silicon Solar Cell Materials and Processes. • Develop a prototype minority-carrier lifetime measurement system capable of accurately measuring both crystalline and multi- crystalline Si wafers in an in-line manufacturing environment. • Apply Dessis 2-D device modeling software to elucidate fundamental limitations in crystalline and polycrystalline PV device designs. Submit at least one peer-reviewed paper that leads to an improved understanding of device performance and/or reliability. • Develop, construct, and test an automated RCPCD minority-carrier lifetime mapping system (one- or two-dimensional) that incorporates auto-tuning and is capable of accepting samples up to 6” in diameter. A summary of progress on these milestones is outlined in section 3.3. 2.4 Surface Analysis Task • Study plasma surface modification of polymer backsheets to investigate the origin of interfacial barrier/backsheet failure. • Investigate surfactant-assisted CBD growth of CdS thin films in CdS/CIGS devices. • Complete SIMS study of elemental out- diffusion during solid phase crystallization of amorphous silicon films on glass substrates. • Specify and order mobile Auger tool for Science and Technology Facility. A summary of progress on these milestones is outlined in section 3.4. Budget allocations by task are provided below. complete summary of all division research activities can be found in our bimonthly reports. Highlights for each task are outlined below. 3.1 Analytical Microscopy Task The nature, origin, and three-dimensional distribution of structural defects in lattice-matched and mismatched III-V structures on Si substrates: In collaboration with NREL’s III-V Group, GaP and GaP(N) epitaxial layers on Si substrates, which were grown by metal organic chemical vapor deposition (MOCVD), were investigated by transmission electron microscopy (TEM) and cathodoluminescence (CL). These structures are being developed for multijunction devices on Si. Particular emphasis was placed on the initiation of growth on Si substrates, because that determines the structural quality of the device layers. By optimizing MOCVD nucleation and growth conditions, nearly defect-free GaP(N) layers have been grown on Si substrates. A low-density misfit dislocation network was observed at the Si/GaP interface. However, very few threading dislocations propagate from it. Using these as templates, the first III-V/Si lattice-matched tandem cells were fabricated. We also obtained the first experimental evidence of atomic ordering in GaNP(As) dilute nitride alloys. This may have a marked effect on the alloy bandgap. We also investigated the structural properties of lattice- mismatched GaAsP on GaP(N) on Si. Both direct deposition and a variety of grading schemes were examined. The growth conditions for achieving the lowest density of dislocations were ascertained. Relatively low defect density (<108 cm-2) MOCVD GaAsP layers were obtained by use of compositionally step-graded buffer layers (Fig. 1). 220DF Step-graded buffer GaAsP FY 2005 Budget ($K) 1,750 1,410 1,710 1,360 665 Task Title Analytical Microscopy Cell and Module Performance Electro-Optical Characterization Surface Analysis Management/Maintenance 3. Results and Accomplishments 1 μm GaP (N) Si Research results outlined in this section address only FY 2005 priority 3 and 4 milestones, which represents only a portion of all support and research activities within the division. A more Photovoltaic R&D Fundamental Research Fig. 1. TEM cross section of a step-graded GaAsP layer on GaP(N) on Si substrate 6 GaAsP step gradePDF Image | DOE Solar Energy Technologies Program
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