DOE Solar Energy Technologies Program

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DOE Solar Energy Technologies Program ( doe-solar-energy-technologies-program )

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The chemical, structural, and electrical properties of the c-Si/a-Si interface in Si HIT cells: In collaboration with NREL’s Si Group, the microstructure and interface properties of Si heterojunction (SHJ) cells were investigated. Such cells have recently demonstrated world- record efficiency on single-side, untextured Si HIT structures. The atomic structure and electronic properties of the crystalline silicon/hydrogenated amorphous silicon (c-Si/a-Si:H) interface were examined by high-resolution transmission electron microscopy (HRTEM), atomic-resolution Z- contrast imaging, and electron energy loss spectroscopy. We found that all high-performance SHJ solar cells exhibit atomically abrupt and flat c- Si/a-Si:H interfaces and high disorder of the a-Si:H layers. These atomically abrupt and flat c-Si/a-Si:H interfaces can be realized by direct deposition of a-Si:H on c-Si substrates at a substrate temperature below 150°C by hot-wire chemical vapor deposition from pure silane. Figure 2(a) shows a Z-contrast image of the front (100) c-Si/a-Si:H interface in a double- heterojunction SHJ solar cell with a high Voc of 680 mV. The intrinsic and doped a-Si layers are not distinguishable in the images. On the c-Si side, the elongated bright spots directly represent the two closely spaced (110) silicon columns, or silicon “dumbbells.” The amorphous feature is shown as continuous background in the Z-contrast image. Combining this Z-contrast image with other HRTEM images, we conclude that the interface is atomically abrupt and flat. To understand the electronic structure change across the interface, EELS spectra were taken at different points around the interface. Figure 2(b) shows the Si-L edges spectra taken from three points indicated as p1, p2, and p3 in Fig. 2(a). Point 1 is inside the a-Si:H layer, point 2 is at the interface, and point 3 is inside the c-Si. It is seen that the intensity of the first peak (as indicated by black arrows) is reduced as the electron beam is moved from the c-Si region to the interface. It is further reduced when the electron beam is moved into the a-Si:H layer. The Si-L edges spectra represent the transition from the silicon 2p band to the conduction band. The intensity reduction of the first peak indicates that the density of states is reduced around the minimum of the conduction band. The reduction at the interface and in the a-Si is likely caused by the disorder. Thus, the intensity of this peak tells us the quality of the a-Si:H layer, i.e., the lower the intensity, the more disorder, i.e., better a-Si. The 7 EELS spectra in Fig. 2(b) indicate a high-quality a- Si:H layer is achieved. a-Si c-Si (a) (b)100 Fig. 2. (a) Z-contrast image of the front c-Si/a-Si:H interface in a double-heterojunction SHJ solar cell, and (b) Si-L edges spectra taken from different points around the c-Si/a-Si:H interface. 3.2 Cell and Module Performance Task ISO 17025 Accreditation for secondary cell calibrations (MYTP M-4, T-1): The Cell and Module Performance Group achieved a very significant priority 3 milestone by expanding ISO 17025 accreditation to include primary reference cell and secondary module calibration under ASTM and IEC standards. The American Association for Laboratory Accreditation (A2LA) awarded the accreditation to NREL on September 12, 2005. Quality calibration plays a critical role in the product-manufacturing process. ISO accreditation provides our customers with confidence that the performance reported for these products is verifiable and internationally accepted. Many of our PV industry partners currently have ISO 9001 quality programs in place. These companies rely on NREL for calibrations of reference cells and modules they use to measure their products. Certified module qualification facilities such as Photovoltaic R&D Fundamental Research p1 p2 p3 1 nm 150 200 Energy (eV) p1 p2 p3 Counts (ab)

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