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total-area efficiency of 13.94% (Voc=806.1 mV, Jsc=24.94 2 mA/cm2, FF=69.22%, and area=0.41 cm ) with ~60%–40% transmission in the wavelength range of 860–1300 nm. When combined with our CIS cell, this tandem device reached 15.3% efficiency. Stability measurement infrastructure was improved by the design and construction of a combinatorial temperature stress system adopted from an earlier successful design. Both systems use a commercial Atlas Suntest CPS+ environmental chamber modified with heated substrate holders positioned under the chamber (Fig. 2). This system represents an improvement over other systems in the program because of its small footprint, long running capability, and in particular, its use of a calibrated solar AM 1.5 spectrum. Because of the latter advantage, the heater plates are designed to hold bandpass filters for testing under selective wavelengths. Fig. 2. Solar Matched Stress Test System 96 sample capability 1500 hour continuous runs Continuous temperature monitoring Voc bias testing AM 1.5 calibrated solar spectrum. 2.3 Concentrator Crystalline Cells We have embarked on a new approach for ultra- high-efficiency concentrator tandem solar cells based on inverted III-V heteroepitaxial structures that combine both lattice-matched and lattice- mismatched component subcells in a monolithic structure. In an ideal tandem solar cell, the top solar cell produces most of the total power. Each cell underneath contributes progressively less, but all serve to boost the total efficiency. Thus, the design of a process to produce the tandem cell must ensure that the top cell is of the very best quality. In conventional designs, where the cell is grown on a substrate from the bottom cell to the top, all current designs to develop a bottom cell at the optimum bandgap of 1 eV degrade the crystalline structure of the top cell. In the new inverted cell, the lattice-matched GaInP and GaAs cells are grown upside down on the GaAs wafer, as shown on the left panel of Fig. 3. A transparent grade changes the lattice constant, in preparation for growth of the GaInAs (1 eV) bottom cell. After growth, the sample is attached to a convenient handle, the original substrate is removed, and the grids are applied (right). These ultra-thin devices have many systems-level advantages and a realistic potential to exceed 40%-efficient terrestrial concentrator conversion. In initial work, we have already demonstrated a record efficiency of 37.9% for concentrator tandem cells using our new approach. Fig. 3. Inverted growth and handle-mounted thin- film high-efficiency solar cell. We have successfully grown, processed, and tested monolithic, series-connected, handle- mounted, ultra-thin GaInP/GaAs/GaInAs tandem solar cells. Quantum efficiency and reflectance data are given in Fig. 4. The data generally show excellent carrier collection across a broad spectral range for all of the subcells. The reflectance data, however, show that photocurrent gains are still possible at the far edges of the tandem response range. Improving the two-layer ZnS/MgF2 ARC will be a focus of future work. A second area of investigation is to develop very high performance devices on silicon. We are exploring lattice-matched GaNPAs-on-Si as a tandem cell combination. III-V semiconductors grown on silicon substrates are very attractive for lower-cost, high-efficiency multijunction solar cells. A two-junction device consisting of a 1.7–eV junction on a 1.1–eV silicon junction has the theoretical potential to achieve nearly optimal Photovoltaic R&D Fundamental Research 19PDF Image | DOE Solar Energy Technologies Program
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