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Performing Organizations: Key Technical Contacts: DOE HQ Technology Manager: FY 2005 Budgets: Objectives Crystalline Silicon Project National Renewable Energy Laboratory (NREL) DOE Golden Field Office (DOE/GO) David Mooney (NREL, Primary Contact, Project Lead), 303-384-6782, david_mooney@nrel.gov Glenn Doyle (DOE/GO), DOE PV Center of Excellence, 303-275-4706, glenn.doyle@go.doe.gov Howard Branz (NREL) C-Si PV: Materials and Device R&D Richard Matson (NREL) University C-Si Research Project Brent Nelson (NREL) Science and Technology Facility Jeffrey Mazer, 202-586-2455, jeffrey.mazer@ee.doe.gov $3,910K (NREL), $950K (DOE/GO) • Further the fundamental understanding and implementation of performance-enhancing features of low-cost, high-efficiency crystalline silicon (c-Si) solar cells. • Support the Crystalline Silicon Center of Excellence for optimizing solar cells through university/industry collaborations on production processes. • Address issues and further device performance through efforts in heterojunction a-Si:H/c-Si passivation and PV devices, B-O pair defects in p-Czochralski (CZ) wafers, theory and experiment, and c-Si films on glass. Develop novel approaches to low-cost deposition of advanced high-quality c-Si films on glass. • Direct university research born of fundamental technological concerns of the c-Si PV industry. • Design and procure a c-Si cluster tool for conducting process-integration R&D in the new NREL Science and Technology Facility Accomplishments • Demonstrated a 17%-efficient heterojunction silicon (a-Si/c-Si) solar cell. • Demonstrated a 12.9%-efficient bifacial heterojunction Si solar cell for p-CZ wafers. • Deposited 0.4 micron of homo-epitaxial Si on Si by the hot-wire chemical vapor deposition (HWCVD) process for use in templated c-Si film on glass technology. • Identified and characterized metallic defects affecting most commercially available c-Si solar cells as a function of processing conditions, including a defect-engineering solution to the "dirty silicon" problem (University of California at Berkeley [UC Berkeley]). • Demonstrated a correlation between in-plane stresses in Si sheet, cell processing, and the critical issue of wafer breakage (Georgia Institute of Technology [Georgia Tech], University of South Florida). • Achieved a number of record high efficiencies on readily manufacturable screen-printed, low-cost material cells (mc: 18.4%, mc-heat exchanger method [HEM]: 17.1%, edge-defined, film-fed growth [EFG]: 16.6%, String Ribbon: 16.8%) and on c-Si (float zone [FZ]: 19%, Ga-doped CZ: 17.7%) (Georgia Tech). • Achieved first proof of concept of strong light-bending using silicon textured with a photonic crystal backside (Massachusetts Institute of Technology [MIT]). • Achieved scalable, uniform, high-pressure, low-temperature, fast HWCVD SiNx antireflection [AR]/passivation coating on String Ribbon (η=>12.4%) (California Institute of Technology [Caltech]). • Developed high-sensitivity technique for the detection and characterization of hydrogen and its role in passivation of Si to complement predictions from first principles (Texas Tech University/Lehigh University). Photovoltaic R&D Fundamental Research 22PDF Image | DOE Solar Energy Technologies Program
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