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possible solar-grade and purer silicon, evolving methods for expanding the utility of the anticipated silicon feedstock, a comparatively enormous technological infrastructure to leverage any improvements in the cost and/or performance characteristics of c-Si PV, the global bet (≥94% market share) is placed on c-Si PV for the foreseeable future—most likely at least for the next decade. As such, there is a very compelling case for a dramatically increased U.S. engagement in the global c-Si PV competition in parallel with its existing R&D programs in other PV material and device systems. The most immediate and cost-effective way of augmenting the current U.S. strategic position in this race is to optimally configure existing resources. The National Center for Photovoltaics, DOE PV Center of Excellence, University c-Si Research Project, as well the c-Si PV industry itself represent pools of considerable talent and resources to bring PV to the next level in performance and cost. 4. Planned FY 2006 Activities • Issue a request for Letters of Interest for new university c-Si research projects. • Finalize current research and development on high-efficiency, low-cost c-Si production processes and recompete current Center of Excellence award. • Continue array of sophisticated experimental and theoretical investigations into the properties of efficiency-limiting defects in c-Si and other material systems and their remediation. • Form a systematic and integrated effort among the DOE-supported c-Si PV R&D efforts—NREL, Georgia Tech, subcontracted universities, and industry—specifically aimed at reducing costs, increasing performance, and improving manufacturing technologies. 5. Major FY 2005 Publications T.H. Wang, E. Iwaniczko, M.R. Page, D.H. Levi, Y. Yan, V. Yelundur, H.M. Branz, A. Rohatgi, and Q. Wang, "Effective Interfaces in Silicon Heterojunction Solar Cells," Proc. 31st IEEE Photovoltaic Specialists Conference, 2005, p. 955. T.H. Wang, E. Iwaniczko, M.R. Page, D.H. Levi, Y. Yan,H.M.Branz,andQ.Wang,“EffectofEmitter Deposition Temperature on Surface Passivation in Hot-Wire Chemical Vapor Deposited Silicon Heterojunction Solar Cells,” Thin Solid Films, in press (avail. online), 2005. C. Wang, H. Zhang, and T. Wang, “Solidification Interface Shape Control in a Continuous Czochralski Silicon Growth System,” J. Crystal Growth, in press, 2005. M.-H. Du, H.M. Branz, R.S. Crandall, and S.B. Zhang, Self-Trapping Enhanced Carrier “Recombination at Light-Induced Boron-Oxygen Complexes in Silicon,” submitted to Phys. Rev. Letters, July 2005. Y. Yan, Q. Wang, M. Page, M.M. Al-Jassim, H.M. Branz, and T.H. Wang, "Z-contrast Imaging of the Atomic Structure of c-Si/a-Si:H Interfaces," submitted to Appl. Phys. Letters, Sept. 2005 D.H. Levi, C.W. Teplin, E. Iwaniczko, Y. Yan, T.H. Wang, and H.M. Branz, “Real-Time Spectroscopic Ellipsometry as an In Situ Probe of the Growth Dynamics of Amorphous and Epitaxial Crystal Silicon for Photovoltaic Applications,” Materials Research Symposium Proceedings, Vol. 862 A14.2, 2005. T.H. Wang, E. Iwaniczko, M.R. Page, Q. Wang, D.H. Levi, Y. Yan, Y. Xu, and H.M. Branz, “High- Performance Amorphous Silicon Emitter for Crystalline Silicon Solar Cells,” Materials Research Symposium Proceedings, Vol. 862, A23.5, 2005. 25 Photovoltaic R&D Fundamental ResearchPDF Image | DOE Solar Energy Technologies Program
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