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4.1.1.4 Technology Approach and Tasks As discussed earlier, the flat-plate area of the PV Subprogram is divided into three principal areas: Fundamental Research, Advanced Materials and Devices, and Technology Development. At present, work done on modules falls primarily into the first two areas, and work done on BOS components and at the overall systems level are discussed in the third area. As application of a systems-driven approach continues and the PV technology matures, this arrangement will likely be modified, with module, BOS, and overall systems development in each of these areas. However, for present purposes, we will start with a discussion of all module work that is being done in the first two areas, and follow with tasks in the Technology Development area. In each of these task areas, universities, national laboratories, and private companies carry out R&D on flat-plate PV devices, components, and systems. Contracts awarded to the companies are generally cost-shared with increasing cost-share requirements as the R&D advances. Collaboration with in-house researchers and use of measurement and characterization facilities at the national laboratories are encouraged. I. Fundamental Research; Advanced Materials and Devices Three general technical areas, crystalline silicon, thin films, and modules, are discussed herein. Further levels of detail are provided within the discussions. Crystalline silicon. Many areas within the c-Si field are ripe for R&D improvements. These include lowered cost and improved-quality feedstock material, decreased metallic impurities and grain boundaries and dislocations, larger-sized ingots/planks/ribbons/boules, increased growth speeds, and lowered environmental costs (i.e., waste reductions, reducing kerf loss, and yielding thinner wafers through improved material properties), all of which have been improved but also possess potential for further development. Technological advancement is being made in two ways: through research on materials and research on process and devices. If we improve the starting material and our knowledge about it, we improve devices made with the material. If we improve the devices, we increase efficiencies and decrease fabrication costs. By improving processes, we also reduce costs. For example, expensive laboratory cells have achieved efficiencies as high as 24.7%, whereas commercially produced cells typically have efficiencies less than 16%. The idea is to develop fabrication processes and device structures that can translate some of the performance features of laboratory cells into manufacturing. Researchers continue to explore highly versatile techniques—such as plasma processing, which can etch surfaces, deposit dielectric coatings, and passivate surface and bulk defects—to form high- efficiency cell structures using manufacturing procedures. This can be thought of as developing new processes that require less energy, material, and labor than conventional approaches and that will result in greater throughput. The goal is to double the output of a manufacturing plant without increasing its size; this will help industry reduce manufacturing costs while increasing output. One research approach that could help reach this goal is rapid thermal processing, a low-cost method that uses high-intensity light to rapidly heat substrates and optically enhance processing steps. Finally, researchers are investigating radically new device structures that have the potential to significantly reduce the cost of cells and modules. Although the Solar Program and its partners have continually reduced costs, it has been done largely through constant refinement in production processes. New approaches that are based on cells and modules specifically designed for easy manufacturability will considerably simplify the assembly of PV modules and can continue to reduce costs. Another approach is thin-film silicon, combining the low cost of thin films with the high efficiency of crystalline silicon by using innovative designs that employ low-cost substrates and techniques that trap light in silicon for total absorption. (Being an indirect-band gap material, c-Si requires substantial device-design innovations to allow it to work well as a thin film.) With proper light-trapping within the silicon layer, silicon as thin as 2 micrometers (100–200 times thinner than traditional crystalline silicon) Solar Energy Technologies Program Multi-Year Technical Plan 54PDF Image | Solar Energy Technologies Program
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