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of the materials was varied within 4 ppm/C of Si3N4, the residual stress in the silicon layer did not decrease to levels much lower than 23-25 ksi (158 – 172 MPa). 30 25 20 15 10 5 0 Effect of Silicon Thickness 0 200 400 600 Si Thickness (Microns) 1200 1400 800 1000 Figure 4.2.2: Calculation of residual stress in Si layer on monolithic Si3N4. The stress in the coating is fairly independent of the coating thickness. Top Si Interlayer SiN Top Si SiN Figure 4.2.3: Various architectures considered to drive down residual stress in the Si-layer of the coating. In addition to the stress analyses, micromechanical fracture modeling was also conducted to explain the effects of residual stress in the Si layer on flaw creation, propagation and interaction with pre-existing flaws in silicon nitride. An object oriented finite element analysis code developed at NIST, known as OOF, was used to investigate the response of the coated substrate to thermal loads. The program performs thermoelastic calculations in two dimensions (plane strain or plane stress) using 3-node triangular elements. Several “smart” meshing schemes based on energy minimization are available to mesh curved features, such as grain boundaries. A digital image of a microstructure, either from an optical/electron microscope or a result of a computer simulation, can be used for analysis. Based on this data, a finite element grid with associated material properties is generated on which mechanical and/or thermal loading can be applied. A solution is then obtained for the specified boundary conditions, distortion, and temperature change. The calculations were done assuming plane stress (σ33=0) and free boundary conditions to mimic unconstrained cooling of a thin plate from its sintering temperature. 85 Stress (ksi)PDF Image | ADVANCED MICROTURBINE SYSTEMS Final Report for Tasks 1 Through 4 and Task 6
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