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Four-point flexure samples coated with the bond coat system were prepared and the coatings were aged in dry air to assess the stability of the coatings. It was found that the samples retained their strength after aging up to 2400F (1315C) for 500 hours. The coating microstructures were also found to be relatively unchanged indicating that the material system did not have intrinsic problems with high temperature stability. It also indicated that the slurry additives used to prepare the dip coated interlayer and the CVD process did not cause the microstructural destabilization of the coating. 4.2.3 Top-coat development The purpose of the top layer applied on to the bond coat system is to provide improved environmental protection against high velocity, high pressure steam at elevated temperatures. UTRC was able to draw from the synergy between the EBC development activity for monolithic silicon nitride and EBCs for SiC/SiC CMCs. The steam stability of the candidate top layer materials was evaluated on dense cold-pressed samples at temperatures between 2400-2700F (1315-1482C). The relative recession resistance of the candidate materials is shown in Figure 4.2.8 below, in comparison with barium strontium aluminosilicate (BSAS) and strontium aluminosilicate (SAS) at 2200F (1204C). The candidate top layer materials (HfO2 and yttrium silicate) exhibited superior recession resistance in this specific comparative test. BSAS BSAS SAS HfO2 Yttrium 1 2700 F 2200 F 2200 F 2600 F Silicate;2600 F Figure 4.2.8: Relative high temperature steam resistance of candidate EBC top layer materials It is also recognized that the ability of a coating to provide steam resistance is highly dependent on its microstructure which in turn depends on the processing technique. As discussed earlier, the ability to process non-line-of-sight coatings was found to be a critical coating requirement and hafnium dioxide (HfO2) was down selected as the best gas-tight top layer candidate. HfO2 is a simple oxide and is relatively simple to apply by both CVD and dip coating. Further, CVD HfO2 was expected to be a relatively well understood process compared to other complex oxides and silicates since it is considered to be a particularly useful dielectric material for electronic/semiconductor applications. 90 Relative Recession RatePDF Image | ADVANCED MICROTURBINE SYSTEMS Final Report for Tasks 1 Through 4 and Task 6
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