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Policy Department A: Economic and Scientific Policy ____________________________________________________________________________________________ If all of today’s tellurium production would be used for the production of CdTe panels, about 1,400 MW of CdTe panels could be produced per year (at 93 g Te/kWp and a tellurium production of 132 t Te/yr). If all tellurium reserves were used for the production of CdTe photovoltaic panels, about 236 GWp could be installed worldwide. Assumed about 1500 kWh per kWp would be generated as a world average, about 355 TWh of electricity could be generated per year (1.8% of totay’s global electricity demand). In case of CIS panels the indium is the scarce material. According to [Angerer 2009] the global indium reserves amount to about 11,000 t based on information from the USGS. According to [Angerer 2009] in 2006 the global indium production was about 580 t. In [Angerer 2009] the indium content of CIS photovoltaic cells is indicated with 50 g/kWp. If all of today’s indium production would be used for the production of CIS panels, about 11,600 MW of CIS panels could be produced per year. If all indium reserves were used for the production of CIS panels, about 220 GW of CIS panels could be installed worldwide. Assumed about 1,500 kWh per kWp would be generated as a world average, about 330 TWh of electricity could be generated per year (1.7% of totay’s global electricity demand). But indium is used for various other products such as light-emitting diodes (LEDs), laser diodes, LCD panels or control rods of nuclear reactors. Therefore, not all the indium is available for CIS photovoltaic. In case of amorphous silicon (aSi) panels the silicon is mainly deposited by chemical vapour deposition, typically plasma-enhanced (PE-CVD) from silane gas and hydrogen gas. Other deposition techniques that are investigated include sputtering and hot wire techniques. Micro morphous silicon (μSi) module technology combines two different types of silicon, amorphous and microcrystalline, in a top and a bottom photovoltaic cell. Environmental performance Emissions of cadmium (Cd) can occur during the production of CdTe cells. Cd can be released as well in case of fire and in conjunction with inappropriate recycling. For the production of thin film photovoltaic panels some companies use NF3 for the cleaning of chemical vapour deposition (CVD) equipment. NF3 is a very strong greenhouse gas (GWP: 17,200 g CO2-equivalent/g). Alternatives are e.g. the onsite production of fluorine gas. 1.2.4. Concentratinig photovoltaic (CPV) Concentrating photovoltaics (CPV) can employ Si-based cells or cells based on so-called III-V semiconductors such as indium gallium arsenide (InGaAs), indium gallium phosphide (InGaP) and germanium (Ge). Highly efficient solar cells can be manufactured from these semiconductors by stacking three or more cells of different materials on top of each other (triple-junction cells, quadruple junction cells, quintuple junction cells). This layout splits the light spectrum into three ranges (short-wave, mid-spectrum and infrared radiation) to increase the absorption and as a result the efficiency. Multi-junction cells are very expensive. By concentrating solar irradiation the required solar cell area per kWp can be significantly reduced and the costly cell technology can compete with established photovoltaic technologies. But concentrating photovoltaics are more adequate for areas with high direct solar irradiation such as Southern Spain, Southern Italy, Portugal and Greece. For areas with high share of indirect irradiation, CPV is not economic. Most concentration systems work with 500 to 1000-fold concentration (also termed ‘suns’). IP/A/ITRE/ST/2009-11 & 12 10 PE 440.278PDF Image | Policy Department Renewable Technologies
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