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these assessments, PV Subprogram activities will be prioritized in terms of their relative importance on the metrics shown earlier in this section. Additionally, Stage Gate decision criteria will be further established and refined to evaluate the merits of continuing down certain pathways and to build in go/no-go decision points. PV Modules (Tier-1 TIO) The use of the SDA and SAM has shown that, across all module technologies, the key metrics for the module TIO that drive competitiveness are efficiency/performance, manufacturing cost per square meter, and reliability/lifetime. A brief discussion is given below of the activities planned by the Solar Program to address the 2011 targets for these metrics, for each module technology. Wafer-Based Crystalline Silicon. Although the price of c-Si modules has come down 85% since 1980 (in real terms), an in-depth analysis of the TIOs shown in Fig. 3.1.6-1 indicates that a number of R&D pathways still exist for continued improvements in performance and cost. The results of these analyses, which are shown in Sec. 3.1.6, reveal several key findings, among the most significant of which concerns c-Si module technologies’ ability to meet long-term Solar Program goals for competitiveness in key markets. Conventional wisdom has long held that c-Si manufacturing costs would make it difficult for this technology to ever reach full competitiveness in retail or wholesale electricity markets. However, when the performance potential of c-Si technologies is included in a whole-system evaluation, the higher long-term manufacturing cost projections are largely offset by efficiency potential of c-Si. The emphasis for improvements in c-Si technology will continue to be on increasing laboratory and production cell efficiencies, while reducing the manufacturing costs per square meter. Efforts to address these metrics will be conducted both at the laboratories and through subcontracted R&D with universities (including DOE’s University Center of Excellence in Silicon) and the PV industry. Internal laboratory efforts will focus on the absorber and cells/ contacts Tier 2 TIOs, while subcontracted R&D will cover the full range of Tier 2 TIOs—absorbers, cells/contacts, interconnects, packaging, and manufacturing. Internal and external efforts will be led and coordinated by the Solar Program’s Crystalline Silicon Project (c-Si Project) and the PV Manufacturing R&D Project. Work will be divided into two high-level areas—efforts on currently produced technologies to address the 2011 targets for commercially available c-Si modules, and efforts on novel materials and devices intended to address Solar Program targets for 2020 and beyond. Examples of specific activities to address c-Si performance and costs are shown below. Note that although c-Si has amassed a very strong reliability record in the field and has not been named as a specific R&D focus, vigilance will be required to ensure this level of reliability is maintained as new module designs and materials are incorporated into fielded products. Crystalline-silicon activities are given below. Absorber (Tier-2 TIO) • Research improved impurity and defect engineering. • Move toward thinner, larger-area wafers with more-efficient feedstock utilization. • Develop new hydrogen passivation techniques. • Develop novel methods for growing thin c-Si on foreign substrates. Cells and Contacts (Tier-2 TIO) • Develop lower-cost cell processes that result in higher-efficiency devices. • Develop novel cell-contacting schemes. • Develop novel device structures such at HIT (heterojunction with intrinsic thin layer) cells. 51PDF Image | Solar Energy Technologies Program
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