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University of South Florida Beyond Photovoltaics - Nanoscale Rectenna for Conversion of Solar and Thermal Energy to Electricity PI: E.K. Stefanakos Co-PIs: Yogi Goswami Students: Rudran Ratnadurai, Electrical Engineering/ Ph.D., Michael Celestin, Chemical Engineering/ Ph.D; Saumya Sharma, Electrical Engineering/PhD; Description: The main objective of the proposal is to commercialize and scale up a new technology, the rectenna, to convert waste heat energy to electricity. Although the prediction of highly efficient (~85%) solar rectennas was published almost 30 years ago, serious technological challenges have prevented such devices from becoming a reality. Since the ultimate goal of a direct optical frequency rectenna photovoltaic power converter is still likely a decade away, our plan is to convert optical solar radiation to thermal radiation (~30 THz regime) using an innovative blackbody source. Leveraging the research efforts of the world-class team members, we plan to further develop the rectenna technology that is within reach of efficient radiation conversion at 30 THz. A fully integrated, blackbody converter and a ~30 THz rectenna system will be capable of converting at least 50% of the solar and thermal energy into usable electrical power, clearly demonstrating a truly transformational new technology in the renewable energy technology sector. For the reporting period, emphasis has been placed on the development of the plasmonic emitter that converts solar radiation to infrared radiation, and the diode that acts as the rectifier in the rectenna concept. Budget: $598,500 Universities: USF External Collaborators: Bhabha Atomic Research Center, India, Florida International University Progress Summary TASK 1. Development of a diode for the rectification of the antenna output. Task 1A: Fabrication, characterization and testing of Metal-Insulator-Metal tunnel junctions The main research objective of this sub-task is to develop a high efficiency MIM tunnel diode using inorganic materials. Towards this, the follow sub-tasks were pursued, • Determine the AC and DC behavior of a Nickel Oxide-Zinc Oxide MIM tunnel diode. • Investigate the effect of metal oxides as insulator layers in MIM junctions. To simulate an asymmetric (P-N junction type) of diode Nickel Oxide-Zinc Oxide combinations wereused. Nickel Oxide (NiO) is known to behave as a p-type semiconductor and Zinc Oxide (ZnO) as an n-type. By combining the two, an effective P-N junction can be created. This P-N junction is in effect a Schottky Barrier Diode (SBD) and behaves similar to it. The carrier concentration is much lower in the NiO and tunneling of electrons from the ZnO layer to the NiO layer takes place across the very thin interface. A top view of the MIM tunnel diode is shown in Fig. 1. 3|PagePDF Image | FESC Research, Education and Outreach Project
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