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US 2005/0145271 A1 Jul.7,2005 MEGASONIC CLEANING VESSEL USING SUPERCRITICAL CO2 TECHNICAL FIELD [0001] Thispresentinventionrelatestoacleaningvessel employing megasonic energy to clean materials, especially, semiconductor Wafers. BACKGROUND ART [0002] WhenprocessingsemiconductorWafers,itisnec essary to remove contaminants from the surfaces of these semiconductor Wafers. These contaminants consist of organic and inorganic materials in the form of particulate, and have been removed using ultrasonic energy (20-200 KilohertZ). For example, the semiconductor Wafers are sub merged in a liquid. The liquid is used as a Working medium, and the ultrasonic energy is applied thereto. The ultrasonic energy causes the liquid to cavitate, and to thereby form vacuum bubbles that subsequently collapse. The formation and collapse of these bubbles in the Working medium releases energy, and the Working medium is agitated by this energy. The agitation in the Working medium is enough to dislodge large particulate from the semiconductor Wafers. [0003] Todislodgeverysmallparticulate,hoWever,agi tation caused by the energy released through the formation and collapse of vacuum bubbles is inadequate. Therefore, megasonic energy (200-2000 KilohertZ) has been used insteadofultrasonicenergy.Forexample,megasonicenergy does not alloW the liquid used as the Working medium to cavitate. Therefore, the megasonic energy can be transmitted through the Working medium, and be applied directly to the semiconductor Wafers. The direct application of the megas onicenergyhasbeeneffectiveinremovingsmallparticulate. [0004] HoWever, When liquid is used as the Working medium, it is difficult to ?ll the cleaning vessel. Generally, liquidshavehighviscosities,and,therefore,signi?cant [0014] FIG.3isacross-sectionalvieWofthecleaning periods of time are required to ?ll the cleaning vessel. Moreover, When the cleaning process is complete, signi? cant periods of time are required to empty the cleaning vessel of the liquid. [0005] Therefore,thereisaneedforacleaningvessel employing megasonic energy for cleaning surfaces of a semiconductor Wafer using a supercritical ?uid, rather than a liquid, as the Working medium. [0006] The is also a need to transform the Working medium into the supercritical ?uid inside the cleaning vessel. For example, the cleaning vessel can be ?lled and evacuated over a shorter period of time using a gas instead of a liquid, and the cleaning vessel can be raised above the critical pressure and critical pressure to transform the gas into the supercritical ?uid. [0015] ReferringtoFIGS.1and2,thecleaningvesselfor cleaning surfaces of a semiconductor Wafer is generally indicated by the numeral 10. The cleaning chamber is formed from a top chamber Wall 11, a bottom chamber Wall 12 and chamber side Walls 14. Together, the top chamber Wall11,bottomchamberWall12,andchambersideWalls14 de?ne a cleaning chamber 16. [0016] Apedestal20adaptedtocarrythesemiconductor Wafers extends upWardly from the bottom chamber Wall 12 in the cleaning chamber 16. The chamber side Walls 14 can be segmented, and together With the top chamber Wall 11 form a lid, and together With the bottom chamber Wall 12 [0007] Moreover,becausethecleaningvesseloperatesat formabase.Thelidcouldbeverticallyadjustedrelativeto high temperatures and high pressures, there is a need for providingaccesstothemegasonictransducerproducingthe megasonic energy. The megasonic transducer is disposed Within the cleaning vessel, and, therefore, high pressure electrical feedthroughs have been used to supply the megas onic transducer. HoWever, such high pressure electrical feedthroughs are expensive, and make servicing the megas onic transducer dif?cult. Therefore, there is a need for access to the megasonic transducer at atmospheric pressures. the base (from a closed position to an open position) to provide access to the cleaning chamber. Thereafter, the semiconductor Wafer can be positioned on the pedestal 20, the lid could be vertically adjusted relative to the base (from the open position to the closed position), and the cleaning processcanbeinitiated.Afterthecleaningprocessiscom plete, the lid could be vertically adjusted relative to the base (from the closed is position to the open position) to again provide access to the cleaning chamber 16. SUMMARY [0008] Amegasoniccleaningvesselisprovidedforclean ing a semiconductor Wafer, comprising: a top chamber Wall; a bottom chamber Wall; side Walls extending betWeen said top chamber Wall and said bottom chamber Wall to provide a cleaning chamber; a megasonic transducer provided in said cleaning chamber; a pedestal extending upWardly from said bottom chamber Wall for supporting the semiconductor Wafer; and an electrical conduit provided through the clean ing vessel for connecting an electrical cable to said megas onic transducer at atmospheric pressure. [0009] Themegasoniccleaningvesselfurthercomprisesa transducerhousingprovidedinthecleaningchamber,andis adapted to hold said megasonic transducer. In certain embodiments, the electrical conduit comprises a ?rst elec tricalcableportprovidedthroughthetopchamberWall,and a second electrical cable port provided through the trans ducerhousing. [0010] Thetransducerhousingmaybeformedfromatop housing Wall, a bottom housing Wall, and an interior Wall and exterior Wall extending therebetWeen, With the second electricalcableportprovidedthroughsaidtophousingWall. [0011] Incertainembodiments,the?rstelectricalcable port and the second electrical cable port are joined to form the electrical conduit using a sealing sleeve. The electrical conduit is isolated from the supercritical carbon dioxide contained in the cleaning chamber. BRIEF DESCRIPTION OF THE DRAWINGS [0012] FIG.1isaperspectivevieWoftheexteriorofthe cleaningvessel. [0013] FIG.2isacross-sectionalvieWofthecleaning vessel along Line 2-2 of FIG. 1. vessel along Line 3-3 of FIG. 2. DETAILED DESCRIPTIONPDF Image | MEGA SONIC CLEANING VESSEL USING SUPERCRITICAL CO2
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