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Energies 2022, 15, 6452 15 of 21 Energies 2022, 15, x FOR PEER REVIEpWresent a good breakdown field of 2.8 ± 0.1 MV/cm and a1l6oowf 23leakage current density of (3.9 ± 1.1) × 10−7 A/cm2 at 1 MV/cm. Figure 10. Grazing incidence XRD diffractogram of the spin-coated ZrOx thin films annealed at 350 Figure 10. Grazing incidence XRD diffractogram of the spin-coated ZrOx thin films annealed at °C in air for 30 min and deposited on a silicon substrate. Energies 2022, 15, x FOR PEER REVIEW ◦ 17 of 23 350 C in air for 30 min and deposited on a silicon substrate. 3.3. Electrical Characterization of the ZrOx Capacitors ZrOx thin films were implemented in metal-insulator-semiconductor (MIS) devices to evaluate their dielectric performance. Figure 11a show the typical C–V curve of the ZrOx thin film capacitors with a small hysteresis. The devices present good stability with a small change of the capacitance over the frequency (1 kHz–100 kHz), as depicted in Figure 11b. To calculate the dielectric contact, a cross-section of the device to determine the ZrOx thick- ness was performed, as shown in the inset of Figure 11b. The ZrOx thin films present a capacitance per unit area of 672 ± 28 nF cm−2 and a dielectric constant of 11.0 ± 0.5 (both calculated at 1 kHz). These values are lower when compared with vacuum deposited crys- talline films due to the lower film density and presence of pores as a consequence of the solution process [71,72,104–106]. Nevertheless, the devices present a good breakdown field of 2.8 ± 0.1 MV/cm and a low leakage current density of (3.9 ± 1.1) × 10−7 A/cm2 at 1 MV/cm. Figure 11. Electrical characteristics of solution-based ZrOx MIS capacitors produced at 350 °C: (a) ◦ Ftiygpuicarleca1p1ac.itaEncle-cvotrltiacgaelchcahraactrearicstiecsraitst1i0c0skHozf;(sbo)aluvetriaogneo-bfcaspeacditaZncreOversuMsfIrSequceanpcyacitorsproducedat350 C: characteristics, and the inset shows the cross-section SEM of the devices; (c) typical leakage current (a) typical capacitance-voltage characteristics at 100 kHz; (b) average of capacitance versus frequency characteristics, and the inset shows the cross-section SEM of the devices; (c) typical leakage current density versus the breakdown field. Figure 11c shows a typical current density versus breakdown field dependence. The density versus the breakdown field. results are in accordance with solution-based ZrOx thin film capacitors [71]. Once low leakage current density was reached (<10−5 A/cm2), it opens the window for future appli- cations such as gate insulators for solution-based thin film transistors. xPDF Image | Comparison between Solution-Based Synthesis Methods of ZrO2
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