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Figure 4 | (a) Cycling data of nano-Si@C anodes with selected C-rates (C 5 4Ag21). (b) CV plot of the first 13 cycles using a scan rate of 0.02 mVs21. (c)Charge-discharge curves for selected cycles. (d) EIS curves for selected cycles showing both experimental and fitted-model data. (e)Equivalent circuit of nano-Si@C electrodes used to produce fitted-model data. Extracted resistance values from the EIS curves for (f) charge transfer resistance and (g) SEI 1 INT resistance. Discussion Complex impedance plots for nano-Si@C anodes obtained via elec- trochemical impedance spectroscopy (EIS) are shown in Fig. 4. The equivalent series resistance (ESR), or high frequency real axis inter- cept, decreases for the first 5 cycles and stabilizes thereafter. The high frequency semicircle also decreases in diameter with cycling, repre- sented by RSEI 1 INT. This is the resistance representing the SEI layer and resistance resulting from imperfect contact between current collector and active material. This contact impedance decreases with cycling, as in Fig. 4g. The mid frequency semicircle representing charge transfer impedance decreases sharply for the first 5 cycles, and stabilizes thereafter, as in Fig. 4f. Interfacial impedance remains www.nature.com/scientificreports SCIENTIFIC REPORTS | 4 : 5623 | DOI: 10.1038/srep05623 5PDF Image | Scalable Synthesis of Nano-Silicon from Beach Sand
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