Nanoparticle Inkjet Inks for Near-Infrared Sintering

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Nanoparticle Inkjet Inks for Near-Infrared Sintering ( nanoparticle-inkjet-inks-near-infrared-sintering )

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Nanomaterials 2020, 10, x FOR PEER REVIEW 4 of 14 Pauw probe location. DLS experiments were performed on a Malvern zetasizer nanoseries (Malvern Nanomaterials 2020, 10, 892 4 of 14 Panalytical, Malvern, UK) device using a 532 nm wavelength. Dispersions were diluted in ethanol. UV-Vis measurements were conducted with the Cary 5000 UV-Vis-NIR spectrometer (Agilent technologies,Santa Clara, CA, USA) in scan mode in clear face quartz cuvettes from 250 up to 1300 diluted in ethanol. UV-Vis measurements were conducted with the Cary 5000 UV-Vis-NIR spectrometer nm with a 1 nm resolution on a diluted ink sample (in ethanol). (Agilent technologies, Santa Clara, CA, USA) in scan mode in clear face quartz cuvettes from 250 up to 1300 nm with a 1 nm resolution on a diluted ink sample (in ethanol). 3. Results and Discussions 3. Results and Discussions First, a comparison between oven sintering and NIR-continuous sintering is made, with focus on sintering duration, sheet resistance (conductivity) and morphology. Then, the NIR absorption of First, a comparison between oven sintering and NIR-continuous sintering is made, with focus on the ink is studied based on thermal imaging. A correlation is found in emissivity and sheet resistance. sintering duration, sheet resistance (conductivity) and morphology. Then, the NIR absorption of the Thereafter, the importance of ink optimization is illustrated. Crucial ink properties are discussed and ink is studied based on thermal imaging. A correlation is found in emissivity and sheet resistance. assigned. Based on these findings, NIR flash sintering is introduced and experiments were performed Thereafter, the importance of ink optimization is illustrated. Crucial ink properties are discussed and to pinpoint the best sintering conditions, taking into account the trade-off between sintering time, assigned. Based on these findings, NIR flash sintering is introduced and experiments were performed temperature, conductivity, morphology. to pinpoint the best sintering conditions, taking into account the trade-off between sintering time, temperature, conductivity, morphology. 3.1. Oven Sintering Versus NIR-Continuous Sintering. 3.1. Oven Sintering Versus NIR-Continuous Sintering To investigate the potential improvement by NIR sintering compared to oven sintering, the sinteTrionignvtemstipgeartaettuhreepoftetnhteiailnikm-cporovveeremdensatmbypNleIRloscinatererinkgepcot mcopnasrteadntoaotv2e0n0s°inCtefroinr gb,otthe sintering ◦ tmemetpheordast.uAreltohfotuhgehinitki-scopvoesrseibdlesatmo spilnetelorctihaisreinkkepat cbonthstlaonwt eart a2n00d hCigfhoerrbtoemthpseinratteurirnegs, m20e0th°oCdis. ◦ Achltohsoeung, ahsithiisspteomsspibelreatourseinisteargtohoisdintrkadaet-booffthbelotweernarnedquhirgehdersitnetmerpinegradtureast,io2n00anCd tiesmchpoesreantu,raes, as indicated by the ink supplier. Having a lower sintering temperature (180 °C is indicated as the this temperature is a good trade-off between required sintering duration and temperature, as indicated lowest possible temperature to achieve sufficient sintering for decent conductivity) will increase the bytheinksupplier.Havingalowersinteringtemperature(180 Cisindicatedasthelowestpossible time for sintering, whereas higher sintering temperatures will affect layer formation in a negative temperature to achieve sufficient sintering for decent conductivity) will increase the time for sintering, way. At the same time, the uncovered substrate temperature is variable and rising continuously in whereas higher sintering temperatures will affect layer formation in a negative way. At the same time, the course of the sintering procedure. The increase of substrate temperature during sintering is the uncovered substrate temperature is variable and rising continuously in the course of the sintering caused by the intensification of NIR light by the PID (Proportional–Integral–Derivative) controller. procedure. The increase of substrate temperature during sintering is caused by the intensification of The PID controller intensifies the NIR light since the printed ink on the substrate will progressively NIR light by the PID (Proportional–Integral–Derivative) controller. The PID controller intensifies the absorb less NIR radiation during sintering, and it is designed to maintain the temperature of the NIR light since the printed ink on the substrate will progressively absorb less NIR radiation during printed area constant at 200 °C [16]. Nevertheless, the surrounding substrate temperature remained sintering, and it is designed to maintain the temperature of the printed area constant at 200 C [16]. well below 200 °C. ◦ Nevertheless,thesurroundingsubstratetemperatureremainedwellbelow200 C. Figure 2 shows the sheet resistance as a function of sintering time for both oven sintering (black) Figure 2 shows the sheet resistance as a function of sintering time for both oven sintering (black) and NIR-continuous sintering of the JS-B40G (blue-red-green-purple) ink at 200◦°C. and NIR-continuous sintering of the JS-B40G (blue-red-green-purple) ink at 200 C. ◦ ◦ Figure 2.. Sintering duration of near-infrared continuous sintering (blue-red-green-purple) and oven sinteriing (black) of JS-B40G ink. Switching from thermal to near-infrared sintering drastically reduces the sintering time,, even with a non-optimized iink.. Every scanning electron microscopy (SEM) image hasa11μmfifeieldldoof fvvieiwewininhohroizrioznotnatladlidreirceticotnio,na,nadnsdhoshwoswthsethperopgrroegsrseiosnsionf poafrptiaclretigclreowgrtohwfrtohmfrtohme etharelyeasrtlaygsetaogf esionftesriintgeruinpgtoupthteo fithnealficnoanldcuocntdivuectliavyerla. yer.

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