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Figure5. Topleft:basicstructureoftheTENGfordielectric-to-dielectricincontact-separationmode.(a)Open-circuitvoltage (Voc) at contacting force of 10 N. Inset: enlarged view of one cycle. Separation causes rising of the Voc to a plateau value, and contact makes it fall back to zero. (b) Short-circuit current (Isc) at contacting force of 10 N. Inset: enlarged view of one cycle. Contact and separation correspond to a positive current pulse and a negative current pulse, respectively. (c) Rectified short- circuit current (Isc) by a full-wave bridge at contacting force of 10 N. Inset: enlarged view of one cycle, showing two current pulses in the same direction. (d) Dependence of the Isc on the contacting force. Larger contacting force corresponds to higher current until saturation occurs. Inset: Isc at contacting force less than 50 N. The data points represent a peak value of current pulses, while the line is the fitted result. (e) Dependence of the current output on external load resistance at a contacting force of 10 N. Increased load resistance results in lower current output but higher voltage output. The points represent the peak value of electric signals, while the line is the fitted result. (f) Dependence of the power output on external load resistance at a contacting force of 500 N, indicating maximum power output when R = 1 MΩ. The curve is a fitted line. (g) Photograph of a setup in which the TENG acts as a direct power source for 600 commercial green, red, and blue LED bulbs, when footstep falls on the NG, simultaneously lighting up the LEDs in real-time. The estimated output open-circuit voltage is ∼1200 V. Note: all LEDs are connected serially. Reproduced from ref 20. Copyright 2013 American Chemical Society. Vertical Contact-Separation Mode-Based TENG: Metal-to-Dielectric Case. The design of the TENG for the metal-to-dielectric in contact-separation mode is presented in Figure 6a.20 According to the triboelectric series, electrons are injected from cellulose paper to PTFE, resulting in net negative charges (Q) on the PTFE surface. In a simplified model, the equivalent circuit of the TENG with an external load of R is illustrated in Figure 6bd, in which the device can be regarded as a flat-panel capacitor. If σ is the charge density of the WANG VOL. XXX ’ NO. XX ’ 000–000 ’ XXXX G www.acsnano.org REVIEWPDF Image | Triboelectric Nanogenerators as New Energy Technology
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