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2. EXPERIMENTAL METHODS equipment allows for the analysis of the elements starting from Be to U thanks to wave-dispersive analysis and two detectors - proportional and scintillation. The typical measurements errors were estimated to be around 5% of relative error. Besides standard measurement, it was possible to investigate thin films and to perform mapping with 0.5 mm resolution. The thin film investigation was able to detect the thin film thickness in a reliable way, which was confirmed by additional experiments - that is AFM profile on ion-etched samples. 2.3 Time-of-Flight Secondary Ion Mass Spec- troscopy Mass spectrometry is a group of techniques that involve analysis of mass of par- ticles that are ejected from investigated solid material and based on that recon- struct the chemical composition of material. The ejection of atoms and ions is caused by a focused beam of so-called primary ions that have a certain amount of energy sufficient for sputtering. The ions that leave the material of interest are accelerated into mass spectrometer and further analyzed in terms of their mass-to-charge ratio. In order to obtain a meaningful quantitative information on atomic concentrations it is necessary to use data for standard materials. The primary ion beam has a small size (diameter) and its position can be controlled, that facilitates a scanning movement of the gun and gives a possibility of surface imaging so a 3D maps of chemical composition, that is depth profiling. The large advantage of the technique is that it can detect ions with a very small detection limit in ppb-ppm range and can detect hydrogen atoms and ions (pro- tons). Depending on the diameter of the primary ion beam the lateral resolution may be as small as 20-50 nanometers, whereas the depth resolution is even higher - 2-30 nm. Depending on type of mass spectrometer used in the equipment a variations of technique exist such as Quadruple Mass Spectrometry, Magnetic Sector Mass Spectrometry or Time-of-Flight Mass Spectrometry which was used in current work. The TOF-SIMS, as it is called, utilizes a measurement of time of ion’s flight to the detector through an area where electric field of known strength is applied. This enables to calculate the mass-to-charge ratio from equation 2.2 t=√d mq (2.2) 2U 42PDF Image | Investigation of metal-insulator transition in magnetron sputtered samarium nickelate thin films
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