Investigation of metal-insulator transition in magnetron sputtered samarium nickelate thin films

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Investigation of metal-insulator transition in magnetron sputtered samarium nickelate thin films ( investigation-metal-insulator-transition-magnetron-sputtered )

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3.3 Structural characterization surement” by Keigo Nagao and Erina Kagami) this is very similar to (110) pole figure of PLT ((Pb,La)TiO3) thin film deposited on silicon substrate measured with in-plane pole figure measurement method. This would agree with the exper- imental setup because the goniometer was set at 56.28 ◦2θ which is the position of (220)(004) plane of SmNiO3 pattern and which is also pretty close to the liter- ature value of 55.53 ◦2θ for the position of (220) plane of silicon crystal powder. This film had, however, some platinum buffer which was also visible on different pole figure measurement. The authors do however attribute the present intensity spots to the epitaxial films. The shift in position may be a result of smearing due to nonmonochromatic radiation, defocusing of the radiation spots and also due to an obvious shift in focusing plane with respect to silicon substrate surface. Further enhancement of the pole figure intensity reveals some structure at low angles (3.21). Four discreet spots of intensity are found at about 27 degrees. Their intensity is over a hundred times smaller than the intensity of 111 set of planes of silicon. In the middle of the pole figure, a broad ring of intensity is detected. The maximum intensity is about 1 k counts, which is four times larger than the discreet spots but still about 23 times smaller than the maximum signal of the 111 silicon planes. The ring in a pole figure visualized along the normal direction is a sign of a wire(fiber)-type texture (chapter 2. in (89)). Figure 3.20: 220 Pole figure of S-36AOw - Data for the most intense spots attributed to the silicon substrate. 81

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