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3. FILM CHARACTERIZATION Figure 3.21: Pole figure of S-36AOw - Enhancement of the low angle region showing cubic symmetry. For both preparation routes, the annealing procedure was held with the same parameters and the only difference was the composition and pressure of the plasma gas mixture. It is a known phenomenon for oxide thin films to have a crystallographic orientation dependent on the atmosphere of deposition, specifi- cally the gas ratio between argon and oxygen. The change of orientation had been reported for nickel oxide films, whose orientation changes from (111) to (200) with the increase of oxygen content on the deposition chamber from o to 100% (16). Another example is the ZnO films in which the increase of oxygen partial pressure-induced deterioration of the intensity of (002) Bragg peak and evolution of mixed texture (69). In work of Czternastek et al. the texture of ZnO films was investigated with respect to total pressure of the Ar+O2 mixture (20). At low pressures no texture is observed and with the increase of pressure the ZnO crystals grow with c-axis perpendicular to the substrate surface (which was Corning glass). In SnO2:Sb films the films are oriented preferably depending on the change of oxygen gas amount in the deposition chamber. Increase of oxygen is parallel to change of preferred orientation It is also related to modification of the surface: the (101) oriented film is reduced while the (110) is oxidized and the ionization potential increases by over 1 eV (80). 82PDF Image | Investigation of metal-insulator transition in magnetron sputtered samarium nickelate thin films
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