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3. FILM CHARACTERIZATION the optical microscope were not identified here. There are some areas of higher contamination formed in tens of parallel paths of grains. The high temperature and pressure during annealing process change both the films crystal structure and morphology. The samples were annealed for 48 hours which is enough time to observe the grain grow. Together with grain growth also the roughness of the surface increases up to tens or hundreds of nanometers. Figure 3.23: AFM image of surface topography of S-30AOn film, 3×3 μm2 scan. - Surface of the film before annealing, the grains have about 40-50 nm in diameter, surface is smooth with low roughness. Image obtained in contact mode. Images of the surface obtained in contact mode AFM show a grainy surface with grains diameter from 50 to 200 nanometers in sample S-36AOw (figures 3.25). However, in tapping mode, the resolution is higher and reveals that the objects perceived as grains in contact mode actually have their inner structure to it. For sample, S-36AOw images show that grains are in fact as small as 10-15 nanometers of diameter. One can also notice the difference when comparing films obtained under vari- ous atmosphere.The films deposited in pure argon have higher surface roughness with many more irregularities and various features. After annealing of the Ar films, the grains appear significantly larger than for Ar+O2 films. They may form column-like structures. 84PDF Image | Investigation of metal-insulator transition in magnetron sputtered samarium nickelate thin films
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