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4.1 Local conductivity of SmNiO3 thin films Figure 4.4: Resistive switching in S-30AOw at 453 K. - A small area scanned with 0.1 V applied bias voltage and further a larger 2 × 2 μm2 area scanned with the same bias voltage. In the large area scan it is evidenced that the resistance of the incorporated part of the material is changed. The difference in mapped currents is not sharp, as the area surrounding the smaller scan area is also affected. It is related with the effect of the local electric field. presence of the described measurement artefacts, among all scanned images the ones that had the least artefacts were chosen for further analysis. The relation- ship between temperature and the value of current averaged over scanned image shows a large scatter (figure 4.6). At lower temperatures the behaviour is some- what erratic. Large differences in measured currents may stem from measurement artefacts or the varying spacial composition of the film. However it is very possible that the sample is undergoing temperature changes locally at various rates. Aver- aged values reveal that there is a slight increase of the current with temperature rise (decrease of resistance). One cannot forget about the surface contamination of mostly chromium oxides that has its important contribution to the measured current values. For example, sputter deposited chromium oxide coatings have the electrical conductivity several orders of magnitude lower than SNO thin films (65, 93). Therefore they will suppress the behaviour of SNO compound. 93PDF Image | Investigation of metal-insulator transition in magnetron sputtered samarium nickelate thin films
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