Investigation of metal-insulator transition in magnetron sputtered samarium nickelate thin films

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Investigation of metal-insulator transition in magnetron sputtered samarium nickelate thin films ( investigation-metal-insulator-transition-magnetron-sputtered )

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4. INVESTIGATION OF METAL-INSULATOR TRANSITION seems to be increased or prolonged friction while scanning. The second cause is related to the inherent properties of the sample. During scanning movement of the microscope, the bias voltage is applied continuously until the end of measure- ment. In many of the images of current distribution, a gradual increase of current together with the scan progression is observed. Such behaviour indicates that the applied voltage may change the state or resistivity of the material. In fact it has been possible to switch the resistivity of a chosen scanned area so that it shows a different response to applied bias voltage (figure 4.4). Not only the scanned area presents a change in current response but also the area surrounding the scan is affected. Figure 4.3: Phenomena during local current mapping in sample S- 36AOw. - Gradual increase in detected current while scanning is connected to the inherent properties of material (left). At the same time a noticeable variation of values of current is detected in areas that form stripe-like pattern (right), this on the other hand related to possible surface contaminants that get stuck to the scanning tip. The borders of the stripes are noticed with green dashed lines. Images collected at different temperatures: left - 453 K, right - 305 K. In order to get insight on the temperature character of resistivity of the sample surface, the averaged current was divided by the applied bias voltage. The results are depicted in figure 4.5. The line connecting points is a guide to the eye. For the S-36AOw film, that is also one of the thickest ones, the bias voltage of 0.1 V was sufficient to image the changes in electrical conductivity. Due to the 92

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