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8 Research 1.62 Å (a) DOS (eV–1 nm–2) 10 10 88 66 44 22 00 Y S X Γ –2 –4 –6 –8 –10 –2 –4 –6 –8 –10 𝛤 XS Y𝛤 S0.511.52 hbar⁎V ⁎k(V =6.63 105 m.s–1) (b) (c) FF S kxmax (d) 10 8 6 4 2 X 0 –2 –4 –6 –8 Y 𝛤 k𝜃max kxmin (e) –10 𝛤XSY𝛤S Siesta (KS) Abinit (KS) Abinit (GcWc) (f) Figure 7: A 3 × 3 borophene super cell in (a, b) lateral views and (c) view from above. (d) DOS and electronic band structure with initial energy aligned to the EF. (e) 3D diagram of the two electronic energy bands crossing the EF in a TEW between −1ev and +1eV. (f) The comparison between LDA with the G0W0 and KS band structures with Siesta GGA-PBE amended one. Reprinted with permission from Ref. [47]. Copyright 2016 IOP Publishing. fabrication techniques, top-down strategies, liquid-phase exfoliation, and sonochemical exfoliation techniques [25, 44, 62, 69, 71, 72]. These rare fabrication investigations show the difficult exfoliation from nonlayer bulk B and thus seri- ously limit the further application of borophene. 3.1. Bottom-Up Fabrication 3.1.1. Physical Growth of Stripped Borophene. Mannix et al. firstly demonstrated the atomically thin borophene on the inert surface of Ag(111) with the morphology of striped- phase nanoribbon using molecular beam epitaxy (MBE) technique in Figures 9(a) and 9(b) [25]. Upon deposition at substrate temperature of 550°C, the morphology shows a striped pattern in Figure 9(c) and a homogeneous pattern in Figure 9(d). The deposition rate and substrate temperature control the growth of these two phases. Figures 9(c) and 9(d) indicate the stable state of striped phase and metastable homogeneous phase. A parallel fabrication work by Feng et al. shows that borophene grows on a Ag(111) substrate epi- taxial [71]. Figure 9(e) reveals the STM of a surface which is covered with β12 borophene lumps. The atomic structure E - EF (eV) 2.87 Å E - EF (eV) 0.89 ÅPDF Image | Two-Dimensional Borophene
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