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Research 9 0 β10 Source Drain Boro/MX2 β20 Vertical barrier Lateral barrier π½12 Boro/C dz π½12 Boro/Blue P dz A dz Channel β30 0 β10 β20 β30 0 β10 β20 β30 B CDE Substrate (a) π½12 Boro/Si (c) π½12 Boro/Black P (d) 2D materials π½12 Boro/Ge π½12 Boro/As (b) π½12 Boro/Sn π½12 Boro/Sb π½12 borophene Boro/MoS2 Boro/MoSe2 π½12 borophene Boro/C Boro/Si π½12 borophene Boro/Blue P Boro/Black p MX2 Boro/WS Boro/WSe2 IV-ene Boro/Ge Boro/Sn IV-ene Boro/As Boro/Sb Figure 8: (a) Ξ²12 borophene is in contact with 2D semiconductor atoms. The electron injection monolayer Ξ²12 borophene shows its path (A βΆ B βΆ C βΆ D βΆ E) by the red arrow. Lateral and top viewports of the utmost steady structure: (b) Ξ²12 borophene gets to MX2 (M for Mo or W; X for S or Se); (c, d) Ξ²12 borophene gets to the group IV-enes. (e) The balanced electrostatic potential with z position for Ξ²12 borophene/2D material interactions. Reprinted with permission from Ref. [34]. Copyright 2017 Royal Society of Chemistry. diagram of Ξ²12 borophene is rectangular [73]. Figure 9(f) reveals the STM topography and atomic structure model of Ο3 borophene. The similar striped atomic arrangement can be obtained in both reported borophene in Figure 9(g). Although the fabrication of borophene is successful, it is still unclear whether synthetic borophene can exist on struc- turally and chemically different layers. Boronβs location in multiple chemical conditions is solved by sub-Angstrom spa- tial resolution, indicating that the borophene generates on planar layer which is larger than the Ag surface that is unre- constructed for about 2.4 A. It has the potential to develop wider diversity of 2D material through the separation from the growth substrate compared with the method of bulk lay- ered crystal structures [74]. Different from the studied growth on Ag substrates, Kiraly et al. report that borophene islands can be generated under high temperatures with Au [75]. The method to pro- duce borophene on Au(111) is different from the way that grows on Ag with only the surface (111). Importantly, the nucleation and growth of borophene are because of energy minimization and strain relief of the Au(111) surface. Owing to the increasing of boron coverage, the borophene changed from small well-organized islands to larger sheets, as shown in Figure 10(a). In Figures 10(b) and 10(c), the growth of one-atom thick boron islands has been proved in AFM. The crystal structure is triangular with honeycomb lattice, and the exact ratio of honeycomb lattice sites and triangular sites is determined to be 1/5 in Figure 10(d). Furthermore, the first-principles calculations prove that the charge- transfer interaction occurs with minor degree of covalent bonding between borophene and Cu. This study opens a bright future for borophene-based device fabrication. 3.1.2. Physical Growth of Honeycomb Borophene. Due to the planar honeycomb structure with sp2 hybridization in gra- phene, it makes it suitable for numerous promising applica- tions [77], which leads to the research enthusiasm on other elemental 2D materials, for instance, silicene [78], germa- nene [79], and stanene [80]. However, these 2D materials are easy to form buckled honeycomb structure owing to the mixed sp2-sp3 hybridization as compared with sp2 hybrid- ization in graphene with planar honeycomb structure. (e) Electrostatic potential (ev)PDF Image | Two-Dimensional Borophene
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