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HIGH PERFORMANCE TRIBOELECTRIC NANOGENERATOR AND ITS APPLICATIONS

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HIGH PERFORMANCE TRIBOELECTRIC NANOGENERATOR AND ITS APPLICATIONS ( high-performance-triboelectric-nanogenerator-and-its-applica )

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and PTFE and Cu-II were changed to a smaller size with a circular diameter of 1 cm. For the TENG with ferroelectric material, a piece of BT ceramic was placed between the PTFE film and Cu-II, with all others parameters kept the same. The thickness of the PTFE film was 200 μm. The TENG used for application demonstration in Figure 7 had a cushioned Cu electrode and did not involve ferroelectric material. Its Cu-I, Cu-II and PTFE film all had the same size of 5 ×5 cm2. 2.1.6.2 Preparation of Doped BT Ceramics Samples of doped BT ceramics were synthesized by the conventional solid-state reaction process. The raw materials, BT without ZnO, were ball-milled in ethanol for 4 h. The dried mixtures were calcined at 1300 °C for 2 h, and then mixed by milling with ZnO powder for other 4 h. Mixed powder was pressed into discs with a diameter of 10 mm and consolidated by isostatic pressing at 200 MPa after adding polyvinyl alcohol, as a binder for granulation. Green compacts were sintered at 1450 °C for 4 h after burning out the binder at 650 °C for 30 min. All samples fabricated had a circular diameter of 1 cm and a thickness of around 0.6 mm. 2.1.6.3 COMSOL Simulation The 2D potential distribution between two oppositely charged surfaces of TENG, as plotted in Figure 4b, was numerically calculated using the commercial software COMSOL. The width of the device was set to be 1 cm and the thickness of both Cu and PTFE film was 200 μm. The gap distance between the Cu and PTFE film was 1 cm, and the surface charge density was 50 μC m-2 for Figure 4b. 25

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