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metal-semiconductor moving contact system is emerging as a new strategy that can potentially overcome the current generation limitations of conventional TENGs us- ing fundamentally different mechanisms.17–23 In tribo-tunneling transport, the voltage and current generation mechanisms are different from that of the traditional polymer-based TENGs (contact electrification and dielectric current generation). A strong electronic excitation due to the induced field can be induced at the metal-insulator-semiconductor (MIS) frictional interface, which subsequently dissipates non-adiabatically into tunneling current and trapped surface charges, or adiabatically into heat.17,21,22 The induced potential field for charge transfer in both tribo-tunneling and traditional tribo-electrification originates from the local polarization of the surface lattice at the interface24–26: Vðz;x;tÞ= jzxj3 d R x ; (Equation1) XNl XNa qaDrka,ðzxÞ k k=1 a=1 where the polarized surface lattice located x for the voltage induced at z, the term qaDrka is the dipole induced by the ath atom in kth unit cell. Nevertheless, the cause of the induced field between tribo-tunneling and tribo-electrification is quite different. The change of (z x) results in impedance variation, and such variations are responsible for the tribo-electrification. At the same time, the tribo-tunneling is caused by the polarization relaxation of perturbed lattices at the interface, i.e., the temporal change of ðqaDrkaÞ. Under open-circuit conditions, VOC of the order of hun- dreds of millivolts has been measured across ultrathin oxide (1–2 nm) in the MIS sliding junction, corresponding to E in the order of 107–108 V/m. Therefore, a syner- gic effect between the photo-generated carriers and friction-induced E can exist. RESULTS AND DISCUSSION Nanoscale Demonstration of the Tribo-Photovoltaic Effect on Metal-MoS2 Sliding Contacts To demonstrate the tribo-photovoltaic concept, we first carried out a conductive atomic force microscopy (C-AFM) experiment on MoS2 layered materials (Figure 1A). Previously, we have reported that the sliding nano-Schottky contact between the conductive AFM tip and MoS2 layered structures can generate high tribo-tunneling d.c. current in the absence of external bias.19 MoS2 thin films deposited by pulsed laser deposition (PLD) on silver (Ag) bottom electrodes were used as the substrates in these experiments.19,27 Figure 1B shows the C-AFM current mapping under dark conditions (Vbias = 0 V) where the current is attributed solely to tribo-tunneling due to tip-sample friction. Tribo-tunneling current becomes zero when there is no sliding motion. As shown in Figure 1C, the current output signal is amplified under laser irra- diation (l = 635 nm, 5 mW), which consists of the tribo-tunneling current from friction and the photovoltaic current from photons simultaneously. The measured photocur- rent is negligible in the absence of sliding. It is found that the current output is enhanced with increasing contact force F (Figure 1D) and is proportional to the irra- diation power (Figure 1E) (see Figures S1 and S2 for more details). The current den- 1Department of Chemical and Biological Engineering, University at Buffalo, The State University of New York, Buffalo, NY 14260, USA 2Department of Chemical and Materials Engineering, University of Alberta, Edmonton, AB T6G 1H9, Canada 3Department of Mechanical and Aerospace Engineering, University at Buffalo, The State University of New York, Buffalo, NY 14260, USA 4College of New Energy and Materials, China University of Petroleum, Beijing 102249, China 5Department of Materials Science and Engineering, Indian Institute of Technology Delhi, Hauzkhas, New Delhi 110016, India 6School of Electrical Engineering and Automation, Jiangxi University of Science and Technology, Ganzhou 341000, China 7Present address: Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, USA 8Lead Contact *Correspondence: luoj@ualberta.ca (J.L.), tgthunda@bufffalo.edu (T.T.) https://doi.org/10.1016/j.matt.2019.05.017 sity J versus F is calculated by estimating the tip-sample effective contact area19 (see 62 Figure S3 for more details). We can see that the J is increased from 1.2 3 10 A/m to 5.6 3 106 A/m2 under F = 30 nN. It is also observed that the extent of current ampli- fication (Iirradiation Idark) is increased with increasing F (Figure 1D). Figures 1G–1K show the laser wavelength l-dependent C-AFM current signals, and the correspond- ing topographic image is shown in Figure 1F. As shown in Figure 1L, the decreasing I signal at higher l is consistent with the reported band gap of PLD-deposited MoS2 thin films (Eg $ 1.29 eV).27 Matter 1, 650–660, September 4, 2019 651PDF Image | Separation and Quantum Tunneling of Photo- generated Carriers Using a Tribo-Induced Field Boosting
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