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Figure 1. Nanoscale Tribo-Photovoltaic Effect on MoS2 (A) Schematics of the C-AFM experiment. A Pt/Ir-coated conductive AFM tip slides on the MoS2 thin film under laser irradiation generating tribo- photovoltaic electricity. The MoS2 thin film was prepared by pulsed laser deposition (PLD) on a Ag bottom electrode. Bias Vbias = 0 V. (B and C) Current mapping in (B) dark and under (C) laser irradiation (5 mW, l = 635 nm) (contact force, F = 5 nN). (D and E) (D) Average current output Iave versus F (5 mW, l = 635 nm); (E) Iave versus laser power (l = 635 nm). (F) Topography of the MoS2 thin film surface. (G–K) The corresponding current mappings under irradiation: (G) l = 450 nm; (H) l = 520 nm; (I) l = 635 nm; (J) l = 808 nm; (K) l = 980 nm. (L) Iave versus l (5 mW). Macroscopic Tribo-Photovoltaic Power Generation in Si-Based Schottky Sliding Systems In the macroscopic experiments (Figure 2A), we demonstrated the concept by sliding a metal probe (stainless steel; Figures 2B and 2C) on a Si substrate (p-type, boron doped, 2.5–4 U cm), as the Si materials are the most commonly used and commercialized materials in the photovoltaic industry. A 200-nm layer of aluminum (Al) sputtered on the back side of the wafer forms the bottom electrode (Figure 2A). Figures 2D and 2E show the open-circuit voltage VOC and short-circuit current ISC of the tribo-photovoltaic d.c. power generation under irradiation with a light intensity of 900 W/m2, respectively. It can be seen that a sustained d.c. with maximum VOC of $300 mV and ISC of $2 mA is generated due to tribo-tunneling transport. When the sliding contact is illuminated, the maximum VOC and the ISC are increased to $600 mV and $8 mA, respectively. Notably, the current enhancement (DI), when the light and friction are present concurrently, is much higher than the photocurrent output without friction (Iphoto, static; Figure 2E), whereas the voltage change (DV) ap- proximates the photovoltage (Vphoto) as shown in Figure 2D. This indicates amplifi- cation of photocurrent transport induced by friction, which is quantified below. Charge Relaxation Dynamics of the Photo-/Tribo-Excited Carriers To test the hypothesis, we have investigated the relaxation dynamics of the photo- excitation and the tribo-tunneling excitation-relaxation process. Figures 2F and 2G show the time t-dependent output signal monitored by a digital oscilloscope. In Figure 2F, the sample was first illuminated with light, followed by a transient sliding impulse by the metal tip (tip velocity v on the order of 1 cm/s). It was observed that 652 Matter 1, 650–660, September 4, 2019PDF Image | Separation and Quantum Tunneling of Photo- generated Carriers Using a Tribo-Induced Field Boosting
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