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Figure 2. Macroscopic Tribo-Photovoltaic Effect on Si (A) Schematic of the tribo-photovoltaic effect in a metal/Si point contact system. Co-harvesting of mechanical and solar energy into high d.c. electricity can be achieved in the metal/Si sliding system. (B and C) Optical image of (B) the tip front and (C) the tip. (D and E) (D) Open-circuit voltage VOC and (E) short-circuit current ISC of the tribo-photovoltaic output. The characterization follows the sequence of friction only, friction + illumination, friction only, and illumination only. A current amplification effect is observed in (E). (F) The relaxation of a single friction impulse-induced signal with/without irradiation (inset). (G) The relaxation of the photo-response with/without friction (inset). The lifetime t of both photo-/friction-induced excitation is prolonged by the synergetic effect. (F) and (G) were collected by an oscilloscope for better time resolution, where the absolute V reading is smaller than the VOC considering the low impedance input ($1 MU). the sliding impulse-induced excitation follows an exponential decay function with an estimated time constant ttribo-photo of 0.22 s. In comparison, the triboelectric signal decays much faster with ttribo < 60 ms in the absence of irradiation, indicating that the recombination of friction-induced e-h pairs is dramatically slowed down by Ephoto; vice versa, the lifetime of photon-excited e-h pairs is also found to be pro- longed by the friction with t increased from 0.48 to $0.81 s as shown in Figure 2G, which infers the slower recombination of photon-excited e-h pairs. Possible Mechanism for the Tribo-Photovoltaic Effect Figure 3A shows the Si doping concentration/type-dependent photovoltage (Vphoto) signal. It can be seen that the Vphoto is negligible when the Si materials are heavily doped either with p- or n-type doping, which is attributed to the short photo-excited e-h pair lifetime in the narrow depletion layer. Notably, the direction of Vphoto reverses from negative to positive when the surface resistivity increases from 0.1–1 U cm (p-type) to 2.5–4 U cm (p-type). A positive output is also observed on the 10–20 U cm (p-type) and 1–10 U cm (n-type) sample. It is well known that the direction of the photocurrent in the MIS system is determined by Schottky barrier formation and surface band bending in the semiconductor depletion layer.28–31 As shown in Figure 3B, the downward band bending in the surface charged region (SCR) of the 0.1–1 U cm (p-type) sample results in negative Vphoto. In contrast, the upward band bending in the other cases give rise to positive Vphoto (Figure 3C). Here, it should be noted that the upward banding may also exist in lightly/moder- ately doped p-type Si due to the surface level pinning effect caused by surface Matter 1, 650–660, September 4, 2019 653PDF Image | Separation and Quantum Tunneling of Photo- generated Carriers Using a Tribo-Induced Field Boosting
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