Separation and Quantum Tunneling of Photo- generated Carriers Using a Tribo-Induced Field Boosting

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Separation and Quantum Tunneling of Photo- generated Carriers Using a Tribo-Induced Field Boosting ( separation-and-quantum-tunneling-photo--generated-carriers-u )

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outputs can be significantly enhanced by photon illumination. We also show that the tribo-photovoltaic effect may be observed in other semiconductor systems, such as transition metal dichalcogenide materials or with different device configu- rations such as a plane-plane sliding structure. Direct coupling of the tribo- tunneling mechanism and photovoltaic properties of the metal-semiconductor contact system offers a unique opportunity by overcoming the current output limitation imposed by traditional mechanical energy harvesting methods. The tribo-photovoltaic effect may be utilized for co-harvesting of solar and mechanical energy in various scenarios such as ocean tidal energy harvesters,10 wind tur- bines,37 and aerospace energy collectors.38 The moving electrodes driven by nat- ural vibration/fluidic flow may also help with removing dust coverage on the solar cell surface, which is detrimental for light adsorption. Meanwhile, tribo-photovol- taic generators may enable solar-mechanical energy harvesting in the daytime and mechanical energy harvesting at night. The tribo-photovoltaic effect can also be applied for sensing applications. EXPERIMENTAL PROCEDURES Tribo-Photovoltaic Output Measurement All Si wafers were purchased from University Wafer, USA. The aluminum bottom con- tact with thickness$200 nm was coated by magnetron sputtering. Macroscopic fric- tion experiments were conducted with a stainless steel probe with tip diameter $200 mm. The automatic motor and control systems were designed and fabricated by Fourien, Canada. The electrical measurements were conducted using a Keithley DMM6500 6 1/2-digit bench/system digital multimeter. The illumination system was a PIFOS150 halogen lamp (Fisher Scientific). The light intensity was calibrated with a PM100D optical power meter (Thorlabs). Synthesis of MoS2 Thin Film by PLD Please refer to our previous work.19 C-AFM Measurements The C-AFM measurements were performed with a Dimension Icon (Bruker, USA) AFM and Pt/Ir-coated conductive AFM probes (ACCESS-EFM, AppNano, USA). The bottom electrode of the sample (Ag surface) was electrically connected to the AFM sample stage with conductive tape. During the measurement, the topo- graphic image and current signal were simultaneously collected by contact-mode scanning and a current amplifier, respectively. The contact force was determined by calibrating the cantilever deflection sensitivity and spring constant. Irradiation was applied by point lasers with different wavelengths: CPS450, CPS520, CPS635, CPS780S, CPS808A, and CPS980 (Thorlabs). The light intensity was controlled by filters and calibrated by a PM100D optical power meter (Thorlabs). SUPPLEMENTAL INFORMATION Supplemental Information can be found online at https://doi.org/10.1016/j.matt. 2019.05.017. ACKNOWLEDGMENTS The authors would like to thank Dr. Zongmin Bei from the Materials Characterization Labs (MCL), University at Buffalo, SUNY, for help with characterization. They would also like to thank Dr. Hao Zeng, Dr. Shenqiang Ren, and Dr. Chuan Zhao for fruitful discussions and feedback. J. Liu and T.T. acknowledge funding support from the 658 Matter 1, 650–660, September 4, 2019

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