Hard Carbons as Anodes in Sodium-Ion Batteries

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Hard Carbons as Anodes in Sodium-Ion Batteries ( hard-carbons-as-anodes-sodium-ion-batteries )

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Molecules 2022, 27, 6516 9 of 32 Molecules 2022, 27, x FOR PEER REVIEW 10 of 34 Figure 6. (a) Schematic illustration of the “adsorption-intercalation “ mechanism for Sodium-ion Figure 6. (a) Schematic illustration of the “adsorption-intercalation “ mechanism for Sodium-ion storage in HC [63]. (b) Theoretical energy cost for Na (red curve) and Li (blue curve) ion insertion storage in HC [63]. (b) Theoretical energy cost for Na (red curve) and Li (blue curve) ion insertion into carbon as a function of the carbon interlayer distance. The inset illustrates the mechanism of into carbon as a function of the carbon interlayer distance. The inset illustrates the mechanism of Na Na and Li-ion insertion into carbon [64]. (c) XRD patterns of doped and original HCs. After and Li-ion insertion into carbon [64]. (c) XRD patterns of doped and original HCs. After P-doping P-doping and S-doping, the (002) peak shifts to a lower angle, which indicates a larger d-spacing. aHndowS-edvoerp,iBn-gd,otphieng(0b0a2r)eplyeaskhisfthsifthtsetpoeaklo.w(de)rTahneglael,vwanhoiscthatincdsiocdaitaetsioanlanrgdedreds-osdpiatciionngp.oHteonw-ever, tial profiles of the original HC and doped HCs at a current rate of 20 mA g−1 [65]. B-doping barely shifts the peak. (d) The galvanostatic sodiation and desodiation potential profiles of the original HC and doped HCs at a current rate of 20 mA g−1 [65]. Moreover, P-doping shows a high reversibility and high capacity of sodium inter- calation, B-doping increases the number of defects in the carbon plane (in the absence of Moreover, P-doping shows a high reversibility and high capacity of sodium intercala- Lewis base, boron can only form three bonds, and its doping is more likely to occur in the tion, B-doping increases the number of defects in the carbon plane (in the absence of Lewis carbon plane and form defect sites), and the doping of sulfur and phosphorus increase base, boron can only form three bonds, and its doping is more likely to occur in the carbon the layer spacing of the graphite microcrystalline region by means of space occupations plane and form defect sites), and the doping of sulfur and phosphorus increase the layer simultaneously (shown in Figure 6c). XRD, transmission electron microscope (TEM), and spacing of the graphite microcrystalline region by means of space occupations simultane- energy dispersive X-ray (EDX) were applied to confirm the conjecture; P-doping and ously (shown in Figure 6c). XRD, transmission electron microscope (TEM), and energy S-doping also increase the layer spacing and sodium storage capacity of the low potential dispersive X-ray (EDX) were applied to confirm the conjecture; P-doping and S-doping platform, indicating that the corresponding mechanism is intercalation. The high defect also increase the layer spacing and sodium storage capacity of the low potential platform, density introduced by B increases the sodium storage capacity in the inclined region, indicating that the corresponding mechanism is intercalation. The high defect density proving that the mechanism of sodium storage in the slope region is the reversible ad- introduced by B increases the sodium storage capacity in the inclined region, proving sorption of defect sites (shown in Figure 6d). It is worth noting that the experiment also that the mechanism of sodium storage in the slope region is the reversible adsorption found that the B-doping site and Sodium-ion have high binding energy, which will in- of defect sites (shown in Figure 6d). It is worth noting that the experiment also found crease the irreversibility of adsorption, so it is necessary to avoid introducing that the B-doping site and Sodium-ion have high binding energy, which will increase the high-energy defect sites into the structure [65]. irreversibility of adsorption, so it is necessary to avoid introducing high-energy defect sites into the structure [65]. 3.3.3. Intercalation-Pore Filling In addition to the two opposite mechanisms mentioned above, there are other so- 3.3.3. Intercalation-Pore Filling dium storage models in which there is no Sodium-ion intercalation between graphite In addition to the two opposite mechanisms mentioned above, there are other sodium layers in HC materials; instead, there is pore filling progress at the low potential plateau storage models in which there is no Sodium-ion intercalation between graphite layers in region, as shown in Figure 7a. HC materials; instead, there is pore filling progress at the low potential plateau region, as shown in Figure 7a.

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