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4. INVESTIGATION OF METAL-INSULATOR TRANSITION Figure 4.13: Temperature dependence of chosen Raman mode in sample S-36AOw - Band position of most intense mode in the spectra versus temperature is depicted. Initial minor increase in position soon changes into rapid softening of the mode down to a critical point at about 418 K. With further increase of tem- perature the position of the mode rapidly moves back in the direction of higher wavenumbers. On the left, Raman spectra at specific temperatures are given to- gether with the fittings. Arrows above the analysed band indicate the direction of changes of its position above the inherent temperature. two massiffs change with temperature increase. The massif 370 - 480 cm−1 is losing spectral weight in favour of 200 - 370 cm−1 massif. The latter one is also becoming narrower. As expected, Raman spectra of sample before annealing present quite a dif- ferent set of bands. Temperature dependent Raman spectra of sample S-30AOn have the Raman active modes in areas partially overlapping strong signal from silicon substrate, which is evidenced here despite the rather high thickness of the film (figure 4.16). The bands are significantly wider than for any annealed sample which indicates that the atomic structure is partially amorphous. The spectra of film are of lower intensity, whereas the prominent bands of silicon substrate ap- pear between 480-560 cm−1 (Si 1st) and 900-1000 cm−1 (Si 2nd). The amorphous structure of the Sm-Ni-O film does not allow for many vibrations to appear col- lectively. No critical temperature was found for the set of obtained spectra. 104PDF Image | Investigation of metal-insulator transition in magnetron sputtered samarium nickelate thin films
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