Investigation of metal-insulator transition in magnetron sputtered samarium nickelate thin films

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Investigation of metal-insulator transition in magnetron sputtered samarium nickelate thin films ( investigation-metal-insulator-transition-magnetron-sputtered )

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4.2 Raman scattering processes Figure 4.14: Temperature dependence of Raman modes in sample S- 12AOw - A selected part of measured Raman spectrum is shown. The spectra contain two main massifs in which most of the individual modes undergo shifts with temperature and a few disappear. The increase of temperature is accompanied with a relative spectral weight transfer from the massif 370 - 480 cm−1 to the massif 200 - 370 cm−1. Raman spectroscopy is by definition strongly related to structural properties of a material, therefore a comparative analysis with the crystallographic struc- ture data should be made. The table 4.1 includes necessary information. One can observe that the critical temperature of minimum value of Raman mode shift behaves according to pseudocubic lattice parameter or lattice mismatch. The higher the mismatch (lower pseudocubic lattice parameter), the higher the criti- cal Raman temperature. The magnitude of Raman mode position change, that is difference between minimal value of Raman mode position and position at room temperature is inversely related to film thickness - the thinner the film the highest the Raman shift difference. For the thickest films, both obtained at different at- mospheric plasma conditions - S-36AOw and S-42Aw, the Raman shift difference 105

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