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4. INVESTIGATION OF METAL-INSULATOR TRANSITION Figure 4.15: Temperature dependence of chosen Raman mode in sample S-12AOw - Band position of most intense mode in the spectra versus temperature is depicted. Initial minor increase in position soon changes into rapid softening of the mode down to a critical point at about 423 K. With further increase of tem- perature the position of the mode slowly moves back in the direction of higher wavenumbers. On the left, Raman spectra at specific temperatures are given to- gether with the fittings. Arrows above the analysed band indicate the direction of changes of its position above the inherent temperature. is the smallest and increases with thickness decrease. 4.3 Nickel electronic structure across the MIT Photoelectron spectroscopy is a powerful technique which is used for both chemi- cal analysis and electronic structure investigation. As it was shown for the EuNiO3 films the careful analysis of core levels can be used for determination of the critical phenomena responsible for MI transition (12). The analysis of the valence band changes for nickel based films were also interesting. However the extreme surface sensitivity of this technique causes severe diffi- culties the measure samples whose surface is affected by the manufacturing tech- nology. Such is the case of SNO films. Despite the apparent surface contamination 106PDF Image | Investigation of metal-insulator transition in magnetron sputtered samarium nickelate thin films
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