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ByNR exhibit a semiconductor band structure (Fig. 5 (a)-(c)) whereas all other BNR varieties remain metallic. The AFM 7-ByNR has an indirect band gap of 0.28 eV (Fig. 5 (c)). The spin up and spin down electrons in FM 7-ByNR both have an indirect gap, the gap is 0.24 eV for the spin up electrons (Fig. 5(a)) and 0.44 eV for the spin down electrons (Fig. 5(b)). As a result, the band gap of FM 7-ByNR is 0.24 eV. In BxNRs, the electrical conductance systematically increases with an increase of Nx as there are more bands (conduction channels) crossing the Fermi level. Figure 4. The band structure of (a) spin up electrons in FM state, (b) spin down electrons in FM state, (c) AFM state and (d) NM state of 8-ByNR.PDF Image | Magnetic Properties of Borophene Nanoribbons
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